Abstract
Addition of a trapping layer to an SIS junction improves its performance as an X-ray detector. In this article X-ray induced pulse height and decay time spectra will be presented as a function of bias voltage. These measurements are in good agreement with a description based on the time constants for trapping, excitation and tunneling calculated by means of a model for proximity layers developed by Golubov et al..1,2The interpretation of the data doesn't require an initial fast loss process for the created quasi-particles as discussed by Van Vechten.
Original language | English |
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Pages (from-to) | 573-580 |
Number of pages | 8 |
Journal | Journal of low temperature physics |
Volume | 93 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1993 |