Superconductive junctions with trappinglayers for the detection of X-rays

J.B. Le grand, M.P. Bruijn, M. Frericks, W. Laauwen, D. Nilsson, P.A.J. de Korte, P. Valko, J.G. Gijsbertsen, E.P. Houwman, J. Flokstra

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Abstract

Addition of a trapping layer to an SIS junction improves its performance as an X-ray detector. In this article X-ray induced pulse height and decay time spectra will be presented as a function of bias voltage. These measurements are in good agreement with a description based on the time constants for trapping, excitation and tunneling calculated by means of a model for proximity layers developed by Golubov et al..1,2The interpretation of the data doesn't require an initial fast loss process for the created quasi-particles as discussed by Van Vechten.
Original languageEnglish
Pages (from-to)573-580
Number of pages8
JournalJournal of low temperature physics
Volume93
Issue number3
DOIs
Publication statusPublished - 1993

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