Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure

Daniel Rosenbach, Peter Schüffelgen, Martin Lanius, Jörn Kampmeier, Gregor Mussler, Markus Eschbach, Ewa Mlynczak, L.ukasz Plucinski, Martina Luysberg, Stefan Trellenkamp, Martin Stehno, Prosper Ngabonziza, Alexander Brinkman, Detlev Grützmacher, Thomas Schäpers

Research output: Contribution to conferencePosterOther research output

Abstract

Topological insulators combined with superconducting electrodes are very promising systems for realizing Majorana bound states. However, realizing functional structures including 3D topological insulator (TI) materials suffer from a high unintentional background doping as well as surface state degradation due to oxygen inclusion as soon as the sample is exposed to air. Here, we present the successful integration of niobium superconducting contacts on top of a 3D TI layer system. The TI layers were grown by means of molecular beam epitaxy on Si (111) substrates and are capped in-situ by a few nm of aluminumoxide to protect the Dirac-like surface states. Utilizing a layer stack of p-type doped Sb2Te3 on top of n-type doped Bi2Te3, defining a p-n heterostructure, pushes the Fermilevel at the upper surface to the Dirac-point.
Original languageEnglish
Publication statusPublished - 8 Mar 2016
EventDPG Frühjahrstagung 2016 Regensburg: (DPG Spring Meeting) - Regensburg, Germany
Duration: 6 Mar 201611 Mar 2016
https://www.dpg-verhandlungen.de/year/2016/conference/regensburg/parts?lang=de

Conference

ConferenceDPG Frühjahrstagung 2016 Regensburg
CountryGermany
CityRegensburg
Period6/03/1611/03/16
Internet address

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insulators
niobium
molecular beam epitaxy
inclusions
degradation
electrodes
air
oxygen

Cite this

Rosenbach, D., Schüffelgen, P., Lanius, M., Kampmeier, J., Mussler, G., Eschbach, M., ... Schäpers, T. (2016). Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure. Poster session presented at DPG Frühjahrstagung 2016 Regensburg, Regensburg, Germany.
Rosenbach, Daniel ; Schüffelgen, Peter ; Lanius, Martin ; Kampmeier, Jörn ; Mussler, Gregor ; Eschbach, Markus ; Mlynczak, Ewa ; Plucinski, L.ukasz ; Luysberg, Martina ; Trellenkamp, Stefan ; Stehno, Martin ; Ngabonziza, Prosper ; Brinkman, Alexander ; Grützmacher, Detlev ; Schäpers, Thomas. / Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure. Poster session presented at DPG Frühjahrstagung 2016 Regensburg, Regensburg, Germany.
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abstract = "Topological insulators combined with superconducting electrodes are very promising systems for realizing Majorana bound states. However, realizing functional structures including 3D topological insulator (TI) materials suffer from a high unintentional background doping as well as surface state degradation due to oxygen inclusion as soon as the sample is exposed to air. Here, we present the successful integration of niobium superconducting contacts on top of a 3D TI layer system. The TI layers were grown by means of molecular beam epitaxy on Si (111) substrates and are capped in-situ by a few nm of aluminumoxide to protect the Dirac-like surface states. Utilizing a layer stack of p-type doped Sb2Te3 on top of n-type doped Bi2Te3, defining a p-n heterostructure, pushes the Fermilevel at the upper surface to the Dirac-point.",
author = "Daniel Rosenbach and Peter Sch{\"u}ffelgen and Martin Lanius and J{\"o}rn Kampmeier and Gregor Mussler and Markus Eschbach and Ewa Mlynczak and L.ukasz Plucinski and Martina Luysberg and Stefan Trellenkamp and Martin Stehno and Prosper Ngabonziza and Alexander Brinkman and Detlev Gr{\"u}tzmacher and Thomas Sch{\"a}pers",
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language = "English",
note = "DPG Fr{\"u}hjahrstagung 2016 Regensburg : (DPG Spring Meeting) ; Conference date: 06-03-2016 Through 11-03-2016",
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Rosenbach, D, Schüffelgen, P, Lanius, M, Kampmeier, J, Mussler, G, Eschbach, M, Mlynczak, E, Plucinski, LU, Luysberg, M, Trellenkamp, S, Stehno, M, Ngabonziza, P, Brinkman, A, Grützmacher, D & Schäpers, T 2016, 'Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure' DPG Frühjahrstagung 2016 Regensburg, Regensburg, Germany, 6/03/16 - 11/03/16, .

Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure. / Rosenbach, Daniel; Schüffelgen, Peter; Lanius, Martin; Kampmeier, Jörn; Mussler, Gregor; Eschbach, Markus; Mlynczak, Ewa; Plucinski, L.ukasz; Luysberg, Martina; Trellenkamp, Stefan; Stehno, Martin; Ngabonziza, Prosper; Brinkman, Alexander ; Grützmacher, Detlev; Schäpers, Thomas.

2016. Poster session presented at DPG Frühjahrstagung 2016 Regensburg, Regensburg, Germany.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure

AU - Rosenbach, Daniel

AU - Schüffelgen, Peter

AU - Lanius, Martin

AU - Kampmeier, Jörn

AU - Mussler, Gregor

AU - Eschbach, Markus

AU - Mlynczak, Ewa

AU - Plucinski, L.ukasz

AU - Luysberg, Martina

AU - Trellenkamp, Stefan

AU - Stehno, Martin

AU - Ngabonziza, Prosper

AU - Brinkman, Alexander

AU - Grützmacher, Detlev

AU - Schäpers, Thomas

PY - 2016/3/8

Y1 - 2016/3/8

N2 - Topological insulators combined with superconducting electrodes are very promising systems for realizing Majorana bound states. However, realizing functional structures including 3D topological insulator (TI) materials suffer from a high unintentional background doping as well as surface state degradation due to oxygen inclusion as soon as the sample is exposed to air. Here, we present the successful integration of niobium superconducting contacts on top of a 3D TI layer system. The TI layers were grown by means of molecular beam epitaxy on Si (111) substrates and are capped in-situ by a few nm of aluminumoxide to protect the Dirac-like surface states. Utilizing a layer stack of p-type doped Sb2Te3 on top of n-type doped Bi2Te3, defining a p-n heterostructure, pushes the Fermilevel at the upper surface to the Dirac-point.

AB - Topological insulators combined with superconducting electrodes are very promising systems for realizing Majorana bound states. However, realizing functional structures including 3D topological insulator (TI) materials suffer from a high unintentional background doping as well as surface state degradation due to oxygen inclusion as soon as the sample is exposed to air. Here, we present the successful integration of niobium superconducting contacts on top of a 3D TI layer system. The TI layers were grown by means of molecular beam epitaxy on Si (111) substrates and are capped in-situ by a few nm of aluminumoxide to protect the Dirac-like surface states. Utilizing a layer stack of p-type doped Sb2Te3 on top of n-type doped Bi2Te3, defining a p-n heterostructure, pushes the Fermilevel at the upper surface to the Dirac-point.

UR - https://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/hl/session/35/contribution/16

M3 - Poster

ER -

Rosenbach D, Schüffelgen P, Lanius M, Kampmeier J, Mussler G, Eschbach M et al. Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure. 2016. Poster session presented at DPG Frühjahrstagung 2016 Regensburg, Regensburg, Germany.