Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure

Daniel Rosenbach, Peter Schüffelgen, Martin Lanius, Jörn Kampmeier, Gregor Mussler, Markus Eschbach, Ewa Mlynczak, L.ukasz Plucinski, Martina Luysberg, Stefan Trellenkamp, Martin Stehno, Prosper Ngabonziza, Alexander Brinkman, Detlev Grützmacher, Thomas Schäpers

Research output: Contribution to conferencePosterOther research output


Topological insulators combined with superconducting electrodes are very promising systems for realizing Majorana bound states. However, realizing functional structures including 3D topological insulator (TI) materials suffer from a high unintentional background doping as well as surface state degradation due to oxygen inclusion as soon as the sample is exposed to air. Here, we present the successful integration of niobium superconducting contacts on top of a 3D TI layer system. The TI layers were grown by means of molecular beam epitaxy on Si (111) substrates and are capped in-situ by a few nm of aluminumoxide to protect the Dirac-like surface states. Utilizing a layer stack of p-type doped Sb2Te3 on top of n-type doped Bi2Te3, defining a p-n heterostructure, pushes the Fermilevel at the upper surface to the Dirac-point.
Original languageEnglish
Publication statusPublished - 8 Mar 2016
EventDPG Frühjahrstagung 2016 Regensburg: (DPG Spring Meeting) - Regensburg, Germany
Duration: 6 Mar 201611 Mar 2016


ConferenceDPG Frühjahrstagung 2016 Regensburg
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