Abstract
Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.
Original language | Undefined |
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Pages (from-to) | 313-325 |
Journal | Journal of electrostatics |
Volume | 33 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1994 |
Keywords
- METIS-112052
- IR-15178