Suppression and origin of soft ESD failures in a submicron CMOS process

F.G. Kuper, Jan Marc Luchies, J.R.M. Luchies, Joop Bruines

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    Abstract

    Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.
    Original languageUndefined
    Pages (from-to)313-325
    JournalJournal of electrostatics
    Volume33
    Issue number3
    DOIs
    Publication statusPublished - 1994

    Keywords

    • METIS-112052
    • IR-15178

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