Suppression and origin of soft ESD failures in a submicron CMOS process

F.G. Kuper; Jan Marc Luchies; J.R.M. Luchies; Joop Bruines

doi:10.1016/0304-3886(94)90037-X

Suppression and origin of soft ESD failures in a submicron CMOS process

F.G. Kuper, Jan Marc Luchies, J.R.M. Luchies, Joop Bruines

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

121 Downloads (Pure)

Abstract

Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.

Original language	Undefined
Pages (from-to)	313-325
Journal	Journal of electrostatics
Volume	33
Issue number	3
DOIs	https://doi.org/10.1016/0304-3886(94)90037-X
Publication status	Published - 1994

Keywords

METIS-112052
IR-15178

Access to Document

10.1016/0304-3886(94)90037-X

Kuper94suppression

Cite this

@article{280eb36c6eb243ffa5d2fbd8d73332ef,

title = "Suppression and origin of soft ESD failures in a submicron CMOS process",

abstract = "Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.",

keywords = "METIS-112052, IR-15178",

author = "F.G. Kuper and Luchies, {Jan Marc} and J.R.M. Luchies and Joop Bruines",

year = "1994",

doi = "10.1016/0304-3886(94)90037-X",

language = "Undefined",

volume = "33",

pages = "313--325",

journal = "Journal of electrostatics",

issn = "0304-3886",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Suppression and origin of soft ESD failures in a submicron CMOS process

AU - Kuper, F.G.

AU - Luchies, Jan Marc

AU - Luchies, J.R.M.

AU - Bruines, Joop

PY - 1994

Y1 - 1994

N2 - Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.

AB - Soft failures occurring after low-level ESD stress of thick and thin oxide NMOSTs in a submicron CMOS process have been studied. Simple drain engineering appears to have a dramatic improving effect. Simulation is used to study the cause for the soft failures.

KW - METIS-112052

KW - IR-15178

U2 - 10.1016/0304-3886(94)90037-X

DO - 10.1016/0304-3886(94)90037-X

M3 - Article

VL - 33

SP - 313

EP - 325

JO - Journal of electrostatics

JF - Journal of electrostatics

SN - 0304-3886

IS - 3

ER -