Surface acoustic wave driven light modulation

Mike van der Poel; M. Beck; Maria Bayard Dühring; M.M. de Lima; Lars Hagedorn Frandsen; Christophe Peucheret; Ole Sigmund; U. Jahn; Jørn Märcher Hvam; P. Santos

Surface acoustic wave driven light modulation

Mike van der Poel, M. Beck, Maria Bayard Dühring, M.M. de Lima, Lars Hagedorn Frandsen, Christophe Peucheret, Ole Sigmund, U. Jahn, Jørn Märcher Hvam, P. Santos

Research output: Contribution to conference › Paper › Academic › peer-review

Abstract

Si and GaAs Mach-Zehnder type light modulators with surface acoustic wave (SAW) excitation are demonstrated. Relative modulation depths of 40% at 950 nm and 5% at 1550 nm in the GaAs and Si samples respectively are achieved at SAW frequency
around 600 MHz. Active area dimensions are down to 20 x 20 mm.

Original language	English
Pages	FB3
Number of pages	4
Publication status	Published - 2007
Externally published	Yes
Event	13th European Conference on Integrated Optics, ECIO 2007 - Copenhagen, Netherlands Duration: 25 Apr 2007 → 27 Apr 2007 Conference number: 13

Conference

Conference	13th European Conference on Integrated Optics, ECIO 2007
Abbreviated title	ECIO
Country	Netherlands
City	Copenhagen
Period	25/04/07 → 27/04/07

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https://www.ecio-conference.org/wp-content/uploads/2016/05/2007/2007_FB3.pdf

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Poel, M. V. D., Beck, M., Dühring, M. B., de Lima, M. M., Frandsen, L. H., Peucheret, C., Sigmund, O., Jahn, U., Hvam, J. M., & Santos, P. (2007). Surface acoustic wave driven light modulation. FB3. Paper presented at 13th European Conference on Integrated Optics, ECIO 2007, Copenhagen, Netherlands. https://www.ecio-conference.org/wp-content/uploads/2016/05/2007/2007_FB3.pdf

@conference{fc8bb1564b3b4576853f30e2a41df807,

title = "Surface acoustic wave driven light modulation",

abstract = "Si and GaAs Mach-Zehnder type light modulators with surface acoustic wave (SAW) excitation are demonstrated. Relative modulation depths of 40% at 950 nm and 5% at 1550 nm in the GaAs and Si samples respectively are achieved at SAW frequencyaround 600 MHz. Active area dimensions are down to 20 x 20 mm.",

author = "Poel, {Mike van der} and M. Beck and D{\"u}hring, {Maria Bayard} and {de Lima}, M.M. and Frandsen, {Lars Hagedorn} and Christophe Peucheret and Ole Sigmund and U. Jahn and Hvam, {J{\o}rn M{\"a}rcher} and P. Santos",

year = "2007",

language = "English",

pages = "FB3",

note = "13th European Conference on Integrated Optics, ECIO 2007, ECIO ; Conference date: 25-04-2007 Through 27-04-2007",

}

Poel, MVD, Beck, M, Dühring, MB, de Lima, MM, Frandsen, LH, Peucheret, C, Sigmund, O, Jahn, U, Hvam, JM & Santos, P 2007, 'Surface acoustic wave driven light modulation', Paper presented at 13th European Conference on Integrated Optics, ECIO 2007, Copenhagen, Netherlands, 25/04/07 - 27/04/07 pp. FB3. <https://www.ecio-conference.org/wp-content/uploads/2016/05/2007/2007_FB3.pdf>

Surface acoustic wave driven light modulation. / Poel, Mike van der; Beck, M.; Dühring, Maria Bayard; de Lima, M.M.; Frandsen, Lars Hagedorn; Peucheret, Christophe; Sigmund, Ole; Jahn, U.; Hvam, Jørn Märcher; Santos, P.

2007. FB3 Paper presented at 13th European Conference on Integrated Optics, ECIO 2007, Copenhagen, Netherlands.

Research output: Contribution to conference › Paper › Academic › peer-review

TY - CONF

T1 - Surface acoustic wave driven light modulation

AU - Poel, Mike van der

AU - Beck, M.

AU - Dühring, Maria Bayard

AU - de Lima, M.M.

AU - Frandsen, Lars Hagedorn

AU - Peucheret, Christophe

AU - Sigmund, Ole

AU - Jahn, U.

AU - Hvam, Jørn Märcher

AU - Santos, P.

N1 - Conference code: 13

PY - 2007

Y1 - 2007

N2 - Si and GaAs Mach-Zehnder type light modulators with surface acoustic wave (SAW) excitation are demonstrated. Relative modulation depths of 40% at 950 nm and 5% at 1550 nm in the GaAs and Si samples respectively are achieved at SAW frequencyaround 600 MHz. Active area dimensions are down to 20 x 20 mm.

AB - Si and GaAs Mach-Zehnder type light modulators with surface acoustic wave (SAW) excitation are demonstrated. Relative modulation depths of 40% at 950 nm and 5% at 1550 nm in the GaAs and Si samples respectively are achieved at SAW frequencyaround 600 MHz. Active area dimensions are down to 20 x 20 mm.

M3 - Paper

SP - FB3

T2 - 13th European Conference on Integrated Optics, ECIO 2007

Y2 - 25 April 2007 through 27 April 2007

ER -