Abstract
Previous extensive studies were performed at Surface Science Western on the
treatment of III-V semiconductors to produce surfaces suitable for subsequent epitaxial
growth. XPS was used to study oxide formation, capping techniques and to monitor
changes that would occur upon thermal desorption. The effects of a remote plasma on
these surfaces was studied as well as to apply thin dielectric films of Si3N4 in order to
study interfacial properties. ARXPS was performed in many cases to ascertain oxide
layer thickness, uniformity and structure. For the types of surfaces studied – mirror
finished semi-conductors, ARXPS is straightforward and the angular dependence is
obtained by physically altering the surface orientation with respect to the analyser.
While the sample can be repositioned with care to analyse the same spot, changing the
angle will effectively change the sampling area, further, surface topography can
preclude the use of ARXPS. Use of parallel angle-resolved XPS (PARXPS), now available
on recent instrumentation, can alleviate these problems. In this case photoelectrons are
collected simultaneously from a large angle. A multichannel detector allows this to be
split into smaller angles thereby giving the PARXPS spectra without physically tilting the
sample. Further, since the sample is not tilted, topographical effects are minimised
allowing meaningful data to be extracted from not so perfect samples. To illustrate this
a detailed PARXPS study on a gallium Indium eutectic (EGaIn) will be presented. Various
methods of extracting the depth information from these spectra will be discussed.
Finally, the application of using PARXPS to study buried interfaces will be briefly
discussed.
Original language | English |
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Pages (from-to) | 1309-1315 |
Journal | Surface and interface analysis |
Volume | 49 |
Issue number | 13 |
DOIs | |
Publication status | Published - Dec 2017 |
Externally published | Yes |
Keywords
- parallel angle-resolved XPS
- buried Interfaces
- gallium indium eutectic
- III-V semiconductors
- non-destructive depth profiling