Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

L. Shi; S. Nihtianov; L. Haspeslagh; F. Scholze; A. Gottwald; L.K. Nanver

doi:10.1109/TED.2012.2210225

Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

L. Shi^*, S. Nihtianov, L. Haspeslagh, F. Scholze, A. Gottwald, L.K. Nanver

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

22 Citations (Scopus)

Abstract

The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p ⁺-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.

Original language	English
Article number	6280660
Pages (from-to)	2888-2894
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TED.2012.2210225
Publication status	Published - 29 Aug 2012
Externally published	Yes

Keywords

Deep ultraviolet (UV) (DUV)
Degradation
Responsivity
Silicon photodiode
Ultrashallow junction
Vacuum UV (VUV)

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title = "Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges",

abstract = "The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p +-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.",

keywords = "Deep ultraviolet (UV) (DUV), Degradation, Responsivity, Silicon photodiode, Ultrashallow junction, Vacuum UV (VUV)",

author = "L. Shi and S. Nihtianov and L. Haspeslagh and F. Scholze and A. Gottwald and L.K. Nanver",

year = "2012",

month = aug,

day = "29",

doi = "10.1109/TED.2012.2210225",

language = "English",

volume = "59",

pages = "2888--2894",

journal = "IEEE Transactions on Electron Devices",

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Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges. / Shi, L.; Nihtianov, S.; Haspeslagh, L.; Scholze, F.; Gottwald, A.; Nanver, L.K.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 11, 6280660, 29.08.2012, p. 2888-2894.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

AU - Shi, L.

AU - Nihtianov, S.

AU - Haspeslagh, L.

AU - Scholze, F.

AU - Gottwald, A.

AU - Nanver, L.K.

PY - 2012/8/29

Y1 - 2012/8/29

N2 - The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p +-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.

AB - The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p +-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.

KW - Deep ultraviolet (UV) (DUV)

KW - Degradation

KW - Responsivity

KW - Silicon photodiode

KW - Ultrashallow junction

KW - Vacuum UV (VUV)

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U2 - 10.1109/TED.2012.2210225

DO - 10.1109/TED.2012.2210225

M3 - Article

AN - SCOPUS:84867978852

VL - 59

SP - 2888

EP - 2894

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

M1 - 6280660

ER -

Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges

Abstract

Keywords

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