Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

S. B. Evseev*, L. K. Nanver, S. Milosaviljevic

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

7Surface-charge-layer sheet resistance SCL-RSH- voltage differential measurements on ring-gate metal-insulator- semiconductor field-effect transistor structures are proposed as an alternative to -parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL- SH. The RF attenuation decreases as RSHincreases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-RSH~ 6.0 ·102 Ω/, minimum RF losses and voltage independent behavior of both parameters. 0018-9480/$31.00

Original languageEnglish
Article number6341879
Pages (from-to)3542-3550
Number of pages9
JournalIEEE transactions on microwave theory and techniques
Volume60
Issue number11
DOIs
Publication statusPublished - 1 Jan 2012
Externally publishedYes

Keywords

  • Argon implantation
  • Coplanar waveguides (CPWs)
  • High-resistivity silicon (HRS)
  • Metal-insulator- semiconductor field-effect transistor (MISFETs)
  • Microwave attenuation
  • Sheet resistance

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