Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

S. B. Evseev; L. K. Nanver; S. Milosaviljevic

doi:10.1109/TMTT.2012.2215050

Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

S. B. Evseev^*, L. K. Nanver, S. Milosaviljevic

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

7Surface-charge-layer sheet resistance SCL-R_SH- voltage differential measurements on ring-gate metal-insulator- semiconductor field-effect transistor structures are proposed as an alternative to -parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL- _SH. The RF attenuation decreases as R_SHincreases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-R_SH~ 6.0 ·10² Ω/, minimum RF losses and voltage independent behavior of both parameters. 0018-9480/$31.00

Original language	English
Article number	6341879
Pages (from-to)	3542-3550
Number of pages	9
Journal	IEEE transactions on microwave theory and techniques
Volume	60
Issue number	11
DOIs	https://doi.org/10.1109/TMTT.2012.2215050
Publication status	Published - 1 Jan 2012
Externally published	Yes

Keywords

Argon implantation
Coplanar waveguides (CPWs)
High-resistivity silicon (HRS)
Metal-insulator- semiconductor field-effect transistor (MISFETs)
Microwave attenuation
Sheet resistance

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title = "Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates",

abstract = "7Surface-charge-layer sheet resistance SCL-RSH- voltage differential measurements on ring-gate metal-insulator- semiconductor field-effect transistor structures are proposed as an alternative to -parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL- SH. The RF attenuation decreases as RSHincreases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-RSH~ 6.0 ·102 Ω/, minimum RF losses and voltage independent behavior of both parameters. 0018-9480/$31.00",

keywords = "Argon implantation, Coplanar waveguides (CPWs), High-resistivity silicon (HRS), Metal-insulator- semiconductor field-effect transistor (MISFETs), Microwave attenuation, Sheet resistance",

author = "Evseev, {S. B.} and Nanver, {L. K.} and S. Milosaviljevic",

year = "2012",

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AU - Evseev, S. B.

AU - Nanver, L. K.

AU - Milosaviljevic, S.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - 7Surface-charge-layer sheet resistance SCL-RSH- voltage differential measurements on ring-gate metal-insulator- semiconductor field-effect transistor structures are proposed as an alternative to -parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL- SH. The RF attenuation decreases as RSHincreases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-RSH~ 6.0 ·102 Ω/, minimum RF losses and voltage independent behavior of both parameters. 0018-9480/$31.00

AB - 7Surface-charge-layer sheet resistance SCL-RSH- voltage differential measurements on ring-gate metal-insulator- semiconductor field-effect transistor structures are proposed as an alternative to -parameter transmission line and capacitance-voltage measurements to evaluate the interface RF losses on high-resistivity-silicon substrates. Argon implantation is employed to amorphize the silicon surface, thus increasing the SCL- SH. The RF attenuation decreases as RSHincreases, if other microwave losses (substrate, metallization, and radiation losses) are kept at the same low level. Full suppression of the surface losses is achieved for high-dose implants, giving SCL-RSH~ 6.0 ·102 Ω/, minimum RF losses and voltage independent behavior of both parameters. 0018-9480/$31.00

KW - Argon implantation

KW - Coplanar waveguides (CPWs)

KW - High-resistivity silicon (HRS)

KW - Metal-insulator- semiconductor field-effect transistor (MISFETs)

KW - Microwave attenuation

KW - Sheet resistance

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JF - IEEE transactions on microwave theory and techniques

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M1 - 6341879

ER -

Surface-charge-layer sheet-resistance measurements for evaluating interface RF losses on high-resistivity-silicon substrates

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Keywords

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