Surface disorder production during plasma immersion implantation and high energy ion implantation

M.A. El-sherbiny, N.Q. Khanh, H. Wormeester, M. Fried, T. Lohner*, I. Pinter, J. Gyulai

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
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High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer is much higher than the projected range of P ions and it is comparable with that of protons. Another example of surface damage investigation is the analysis of anomalous surface disorder created by 900 keV and 1.4 MeV Xe implantation in 100 silicon. For the 900 keV implants the surface damage was also characterized with spectroellipsometry (SE). Evaluation of ellipsometric data yields thickness values for surface damage that are in reasonable agreement with those obtained by RBS.
Original languageEnglish
Pages (from-to)728-732
Number of pages5
JournalNuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Issue number1-4
Publication statusPublished - 1996
Event12th International Conference on Ion Beam Analysis, IBA 1995 - The Arizona State University, Tempe, United States
Duration: 22 May 199526 May 1995
Conference number: 12


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