Surface dynamics of monoatomic steps on Si(001) studied with a high temperature scanning tunneling microscope

H. J.W. Zandvliet*, H. B. Elswijk, E. J. van Loenen

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

57 Citations (Scopus)
6 Downloads (Pure)

Abstract

A recently developed, thermally stable scanning tunneling microscope (STM) allows the observation of surfaces at elevated temperatures, up to at least 850 K. We used this STM to study the dynamic behaviour of monoatomic steps on vicinal Si(001). Steps are pinned at surface defects. At unpinned positions, kinks in the step edges change on a time scale of seconds at a temperature of 725 K. We deduce a value of 2.0 eV for the kink detachment energy of the free kinks. Images with dimer-row resolution of Si(100) are obtained for temperatures up to 725 K. Above 850 K the images of the surface steps become fuzzy because of their motion during image acquisition.

Original languageEnglish
Pages (from-to)264-268
Number of pages5
JournalSurface science
Volume272
Issue number1-3
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint Dive into the research topics of 'Surface dynamics of monoatomic steps on Si(001) studied with a high temperature scanning tunneling microscope'. Together they form a unique fingerprint.

  • Cite this