Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan; E. Berenschot; G. Krijnen; M. Elwenspoek

doi:10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan, E. Berenschot, G. Krijnen, M. Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K²_eff ≈ 1.7 %.

Original language	English
Title of host publication	Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005
Subtitle of host publication	Digest of Technical Papers
Place of Publication	Los Alamitos, CA
Publisher	IEEE
Pages	1362-1365
Number of pages	4
ISBN (Print)	0-7803-8994-8
DOIs	https://doi.org/10.1109/SENSOR.2005.1497334
Publication status	Published - Jun 2005
Event	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005 Conference number: 13

Publication series

Name	International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS
Publisher	IEEE
Volume	2005
ISSN (Print)	2159-547X
ISSN (Electronic)	2164-1641

Conference

Conference	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
Abbreviated title	TRANSDUCERS
Country/Territory	Korea, Republic of
City	Seoul
Period	5/06/05 → 9/06/05

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/SENSOR.2005.1497334

Saravan2005surfaceFinal published version, 633 KBLicence: Taverne

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Saravanan, S., Berenschot, E., Krijnen, G., & Elwenspoek, M. (2005). Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005: Digest of Technical Papers (pp. 1362-1365). (International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS; Vol. 2005). IEEE. https://doi.org/10.1109/SENSOR.2005.1497334

Saravanan, S. ; Berenschot, E. ; Krijnen, G. et al. / Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005: Digest of Technical Papers. Los Alamitos, CA : IEEE, 2005. pp. 1362-1365 (International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS).

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title = "Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications",

abstract = "We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2eff ≈ 1.7 %.",

author = "S. Saravanan and E. Berenschot and G. Krijnen and M. Elwenspoek",

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booktitle = "Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005",

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Saravanan, S, Berenschot, E , Krijnen, G & Elwenspoek, M 2005, Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. in Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005: Digest of Technical Papers. International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS, vol. 2005, IEEE, Los Alamitos, CA, pp. 1362-1365, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. / Saravanan, S.; Berenschot, E.; Krijnen, G. et al.
Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005: Digest of Technical Papers. Los Alamitos, CA: IEEE, 2005. p. 1362-1365 (International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

AU - Saravanan, S.

AU - Berenschot, E.

AU - Krijnen, G.

AU - Elwenspoek, M.

N1 - Conference code: 13

PY - 2005/6

Y1 - 2005/6

N2 - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2eff ≈ 1.7 %.

AB - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2eff ≈ 1.7 %.

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DO - 10.1109/SENSOR.2005.1497334

M3 - Conference contribution

SN - 0-7803-8994-8

T3 - International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS

SP - 1362

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BT - Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005

PB - IEEE

CY - Los Alamitos, CA

T2 - 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005

Y2 - 5 June 2005 through 9 June 2005

ER -

Saravanan S, Berenschot E , Krijnen G, Elwenspoek M. Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005: Digest of Technical Papers. Los Alamitos, CA: IEEE. 2005. p. 1362-1365. (International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS). doi: 10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

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