Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan; S. Saravanan; Johan W. Berenschot; Gijsbertus J.M. Krijnen; Michael Curt Elwenspoek

doi:10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan, S. Saravanan, Johan W. Berenschot, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

Original language	Undefined
Title of host publication	Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005
Place of Publication	Los Alamitos
Publisher	IEEE Computer Society
Pages	1362-1365
Number of pages	4
ISBN (Print)	0-7803-8994-8
DOIs	https://doi.org/10.1109/SENSOR.2005.1497334
Publication status	Published - Jun 2005
Event	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005 Conference number: 13

Publication series

Name
Publisher	IEEE
Volume	2

Conference

Conference	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
Abbreviated title	TRANSDUCERS
Country	Korea, Republic of
City	Seoul
Period	5/06/05 → 9/06/05

Keywords

EWI-10276
METIS-224200
IR-52581

Access to Document

10.1109/SENSOR.2005.1497334

surface__micromachined_-_saravanan
open
01497334
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Cite this

Saravanan, S., Saravanan, S., Berenschot, J. W., Krijnen, G. J. M., & Elwenspoek, M. C. (2005). Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005 (pp. 1362-1365). Los Alamitos: IEEE Computer Society. https://doi.org/10.1109/SENSOR.2005.1497334

Saravanan, S. ; Saravanan, S. ; Berenschot, Johan W. ; Krijnen, Gijsbertus J.M. ; Elwenspoek, Michael Curt. / Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. pp. 1362-1365

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title = "Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications",

abstract = "We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 {\%}.",

keywords = "EWI-10276, METIS-224200, IR-52581",

author = "S. Saravanan and S. Saravanan and Berenschot, {Johan W.} and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",

year = "2005",

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doi = "10.1109/SENSOR.2005.1497334",

language = "Undefined",

isbn = "0-7803-8994-8",

publisher = "IEEE Computer Society",

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booktitle = "Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005",

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Saravanan, S, Saravanan, S, Berenschot, JW , Krijnen, GJM & Elwenspoek, MC 2005, Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. in Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. IEEE Computer Society, Los Alamitos, pp. 1362-1365, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. / Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt.

Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. p. 1362-1365.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

AU - Saravanan, S.

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AU - Elwenspoek, Michael Curt

PY - 2005/6

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N2 - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

AB - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

KW - EWI-10276

KW - METIS-224200

KW - IR-52581

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DO - 10.1109/SENSOR.2005.1497334

M3 - Conference contribution

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BT - Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005

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Saravanan S, Saravanan S, Berenschot JW , Krijnen GJM, Elwenspoek MC. Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos: IEEE Computer Society. 2005. p. 1362-1365 https://doi.org/10.1109/SENSOR.2005.1497334