Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan, E. Berenschot, G. Krijnen, M. Elwenspoek

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    Abstract

    We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K2eff ≈ 1.7 %.
    Original languageEnglish
    Title of host publicationProceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2005
    Subtitle of host publicationDigest of Technical Papers
    Place of PublicationLos Alamitos, CA
    PublisherIEEE
    Pages1362-1365
    Number of pages4
    ISBN (Print)0-7803-8994-8
    DOIs
    Publication statusPublished - Jun 2005
    Event13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of
    Duration: 5 Jun 20059 Jun 2005
    Conference number: 13

    Publication series

    NameInternational Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS
    PublisherIEEE
    Volume2005
    ISSN (Print)2159-547X
    ISSN (Electronic)2164-1641

    Conference

    Conference13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
    Abbreviated titleTRANSDUCERS
    Country/TerritoryKorea, Republic of
    CitySeoul
    Period5/06/059/06/05

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