Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

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Abstract

We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.
Original languageUndefined
Title of host publicationProceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005
Place of PublicationLos Alamitos
PublisherIEEE Computer Society
Pages1362-1365
Number of pages4
ISBN (Print)0-7803-8994-8
DOIs
Publication statusPublished - Jun 2005
Event13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of
Duration: 5 Jun 20059 Jun 2005
Conference number: 13

Publication series

Name
PublisherIEEE
Volume2

Conference

Conference13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
Abbreviated titleTRANSDUCERS
CountryKorea, Republic of
CitySeoul
Period5/06/059/06/05

Keywords

  • EWI-10276
  • METIS-224200
  • IR-52581

Cite this

Saravanan, S., Saravanan, S., Berenschot, J. W., Krijnen, G. J. M., & Elwenspoek, M. C. (2005). Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005 (pp. 1362-1365). Los Alamitos: IEEE Computer Society. https://doi.org/10.1109/SENSOR.2005.1497334
Saravanan, S. ; Saravanan, S. ; Berenschot, Johan W. ; Krijnen, Gijsbertus J.M. ; Elwenspoek, Michael Curt. / Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. pp. 1362-1365
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title = "Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications",
abstract = "We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 {\%}.",
keywords = "EWI-10276, METIS-224200, IR-52581",
author = "S. Saravanan and S. Saravanan and Berenschot, {Johan W.} and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",
year = "2005",
month = "6",
doi = "10.1109/SENSOR.2005.1497334",
language = "Undefined",
isbn = "0-7803-8994-8",
publisher = "IEEE Computer Society",
pages = "1362--1365",
booktitle = "Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005",
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}

Saravanan, S, Saravanan, S, Berenschot, JW, Krijnen, GJM & Elwenspoek, MC 2005, Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. in Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. IEEE Computer Society, Los Alamitos, pp. 1362-1365, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497334

Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. / Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt.

Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. p. 1362-1365.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

AU - Saravanan, S.

AU - Saravanan, S.

AU - Berenschot, Johan W.

AU - Krijnen, Gijsbertus J.M.

AU - Elwenspoek, Michael Curt

PY - 2005/6

Y1 - 2005/6

N2 - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

AB - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

KW - EWI-10276

KW - METIS-224200

KW - IR-52581

U2 - 10.1109/SENSOR.2005.1497334

DO - 10.1109/SENSOR.2005.1497334

M3 - Conference contribution

SN - 0-7803-8994-8

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EP - 1365

BT - Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005

PB - IEEE Computer Society

CY - Los Alamitos

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Saravanan S, Saravanan S, Berenschot JW, Krijnen GJM, Elwenspoek MC. Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos: IEEE Computer Society. 2005. p. 1362-1365 https://doi.org/10.1109/SENSOR.2005.1497334