Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

S. Saravanan, S. Saravanan, Johan W. Berenschot, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.
    Original languageUndefined
    Title of host publicationProceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005
    Place of PublicationLos Alamitos
    PublisherIEEE Computer Society
    Pages1362-1365
    Number of pages4
    ISBN (Print)0-7803-8994-8
    DOIs
    Publication statusPublished - Jun 2005
    Event13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of
    Duration: 5 Jun 20059 Jun 2005
    Conference number: 13

    Publication series

    Name
    PublisherIEEE
    Volume2

    Conference

    Conference13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
    Abbreviated titleTRANSDUCERS
    CountryKorea, Republic of
    CitySeoul
    Period5/06/059/06/05

    Keywords

    • EWI-10276
    • METIS-224200
    • IR-52581

    Cite this

    Saravanan, S., Saravanan, S., Berenschot, J. W., Krijnen, G. J. M., & Elwenspoek, M. C. (2005). Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005 (pp. 1362-1365). Los Alamitos: IEEE Computer Society. https://doi.org/10.1109/SENSOR.2005.1497334
    Saravanan, S. ; Saravanan, S. ; Berenschot, Johan W. ; Krijnen, Gijsbertus J.M. ; Elwenspoek, Michael Curt. / Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. pp. 1362-1365
    @inproceedings{4c76fb6aaf504fb4b3328cc56e316413,
    title = "Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications",
    abstract = "We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 {\%}.",
    keywords = "EWI-10276, METIS-224200, IR-52581",
    author = "S. Saravanan and S. Saravanan and Berenschot, {Johan W.} and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",
    year = "2005",
    month = "6",
    doi = "10.1109/SENSOR.2005.1497334",
    language = "Undefined",
    isbn = "0-7803-8994-8",
    publisher = "IEEE Computer Society",
    pages = "1362--1365",
    booktitle = "Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005",
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    }

    Saravanan, S, Saravanan, S, Berenschot, JW, Krijnen, GJM & Elwenspoek, MC 2005, Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. in Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. IEEE Computer Society, Los Alamitos, pp. 1362-1365, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497334

    Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. / Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt.

    Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. p. 1362-1365.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    T1 - Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications

    AU - Saravanan, S.

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    AU - Elwenspoek, Michael Curt

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    N2 - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

    AB - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.

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    KW - METIS-224200

    KW - IR-52581

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    Saravanan S, Saravanan S, Berenschot JW, Krijnen GJM, Elwenspoek MC. Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. In Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos: IEEE Computer Society. 2005. p. 1362-1365 https://doi.org/10.1109/SENSOR.2005.1497334