Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005 |
| Place of Publication | Los Alamitos |
| Publisher | IEEE Computer Society |
| Pages | 1362-1365 |
| Number of pages | 4 |
| ISBN (Print) | 0-7803-8994-8 |
| DOIs | |
| Publication status | Published - Jun 2005 |
| Event | 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005 Conference number: 13 |
Publication series
| Name | |
|---|---|
| Publisher | IEEE |
| Volume | 2 |
Conference
| Conference | 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 |
|---|---|
| Abbreviated title | TRANSDUCERS |
| Country | Korea, Republic of |
| City | Seoul |
| Period | 5/06/05 → 9/06/05 |
Keywords
- EWI-10276
- METIS-224200
- IR-52581
Cite this
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Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications. / Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt.
Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos : IEEE Computer Society, 2005. p. 1362-1365.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Surface micromachined fabrication of piezoelectric ain unimorph suspension devices for rf resonator applications
AU - Saravanan, S.
AU - Saravanan, S.
AU - Berenschot, Johan W.
AU - Krijnen, Gijsbertus J.M.
AU - Elwenspoek, Michael Curt
PY - 2005/6
Y1 - 2005/6
N2 - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.
AB - We report a surface micromachining process for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for actuator applications. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films 1 /spl mu/m thick are deposited by rf reactive sputtering. Thin layers of chromium on either side of the AIN are used as top and bottom electrodes and also used as a mask to etch the AlN layer. Scattering parameters are measured in fabricated samples using a vector network analyzer. Results show resonant frequencies of devices in the range of (1-2) GHz with an effective electromechanical coupling factor K/sup 2//sub eff/ /spl ap/ 1.7 %.
KW - EWI-10276
KW - METIS-224200
KW - IR-52581
U2 - 10.1109/SENSOR.2005.1497334
DO - 10.1109/SENSOR.2005.1497334
M3 - Conference contribution
SN - 0-7803-8994-8
SP - 1362
EP - 1365
BT - Proceedings of the 13th International Conferences on Solid-State Sensors, Actuators and Microsystems 2005
PB - IEEE Computer Society
CY - Los Alamitos
ER -