Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes

A. Burtsev; H. Schut; L. K. Nanver; A. Van Veen; J. Slabbekoorn; T. L.M. Scholtes

doi:10.1016/j.mseb.2004.07.012

Surface morphologies of excimer-laser annealed BF₂⁺ implanted Si diodes

A. Burtsev^*, H. Schut, L. K. Nanver, A. Van Veen, J. Slabbekoorn, T. L.M. Scholtes

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

Laser-induced surface roughness and damage formation in ultra-shallow n⁺-p and p⁺-n junctions, formed by low energy (5 keV) As⁺ and BF₂⁺ implantations in Si, respectively, with a dose of 1 × 10¹⁵ cm^-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm². However, anomalous behavior is witnessed for BF₂⁺-implanted Si sample at 800 mJ/cm ², at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F₂ fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

Original language	English
Pages (from-to)	109-113
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	114-115
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mseb.2004.07.012
Publication status	Published - 30 Dec 2004
Externally published	Yes

Keywords

Excimer-laser annealing
Laser-induced surface roughness
Low-energy implantation
Positron annihilation Doppler broadening technique
Silicon diodes
Ultra-shallow junctions

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10.1016/j.mseb.2004.07.012

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@article{03dd8d450c314a35a76905b99755a293,

title = "Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes",

abstract = "Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.",

keywords = "Excimer-laser annealing, Laser-induced surface roughness, Low-energy implantation, Positron annihilation Doppler broadening technique, Silicon diodes, Ultra-shallow junctions",

author = "A. Burtsev and H. Schut and Nanver, {L. K.} and {Van Veen}, A. and J. Slabbekoorn and Scholtes, {T. L.M.}",

year = "2004",

month = dec,

day = "30",

doi = "10.1016/j.mseb.2004.07.012",

language = "English",

volume = "114-115",

pages = "109--113",

journal = "Materials science & engineering B",

issn = "0921-5107",

publisher = "Taylor & Francis",

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Surface morphologies of excimer-laser annealed BF₂⁺ implanted Si diodes. / Burtsev, A.; Schut, H.; Nanver, L. K.; Van Veen, A.; Slabbekoorn, J.; Scholtes, T. L.M.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 109-113.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes

AU - Burtsev, A.

AU - Schut, H.

AU - Nanver, L. K.

AU - Van Veen, A.

AU - Slabbekoorn, J.

AU - Scholtes, T. L.M.

PY - 2004/12/30

Y1 - 2004/12/30

N2 - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

AB - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

KW - Excimer-laser annealing

KW - Laser-induced surface roughness

KW - Low-energy implantation

KW - Positron annihilation Doppler broadening technique

KW - Silicon diodes

KW - Ultra-shallow junctions

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U2 - 10.1016/j.mseb.2004.07.012

DO - 10.1016/j.mseb.2004.07.012

M3 - Article

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VL - 114-115

SP - 109

EP - 113

JO - Materials science & engineering B

JF - Materials science & engineering B

SN - 0921-5107

IS - SPEC. ISS.

ER -

Surface morphologies of excimer-laser annealed BF₂⁺ implanted Si diodes

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Keywords

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