Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes

A. Burtsev, H. Schut, L. K. Nanver, A. Van Veen, J. Slabbekoorn, T. L.M. Scholtes

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

Original languageEnglish
Pages (from-to)109-113
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume114-115
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 30 Dec 2004
Externally publishedYes

Fingerprint

Positron annihilation
Doppler effect
Excimer lasers
positron annihilation
excimer lasers
Surface morphology
surface roughness
Diodes
Surface roughness
diodes
Microcavities
laser annealing
Lasers
p-n junctions
lasers
electric contacts
Atomic force microscopy
implantation
flux density
atomic force microscopy

Keywords

  • Excimer-laser annealing
  • Laser-induced surface roughness
  • Low-energy implantation
  • Positron annihilation Doppler broadening technique
  • Silicon diodes
  • Ultra-shallow junctions

Cite this

Burtsev, A. ; Schut, H. ; Nanver, L. K. ; Van Veen, A. ; Slabbekoorn, J. ; Scholtes, T. L.M. / Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2004 ; Vol. 114-115, No. SPEC. ISS. pp. 109-113.
@article{03dd8d450c314a35a76905b99755a293,
title = "Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes",
abstract = "Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.",
keywords = "Excimer-laser annealing, Laser-induced surface roughness, Low-energy implantation, Positron annihilation Doppler broadening technique, Silicon diodes, Ultra-shallow junctions",
author = "A. Burtsev and H. Schut and Nanver, {L. K.} and {Van Veen}, A. and J. Slabbekoorn and Scholtes, {T. L.M.}",
year = "2004",
month = "12",
day = "30",
doi = "10.1016/j.mseb.2004.07.012",
language = "English",
volume = "114-115",
pages = "109--113",
journal = "Materials science & engineering B",
issn = "0921-5107",
publisher = "Taylor & Francis",
number = "SPEC. ISS.",

}

Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes. / Burtsev, A.; Schut, H.; Nanver, L. K.; Van Veen, A.; Slabbekoorn, J.; Scholtes, T. L.M.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 109-113.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes

AU - Burtsev, A.

AU - Schut, H.

AU - Nanver, L. K.

AU - Van Veen, A.

AU - Slabbekoorn, J.

AU - Scholtes, T. L.M.

PY - 2004/12/30

Y1 - 2004/12/30

N2 - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

AB - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.

KW - Excimer-laser annealing

KW - Laser-induced surface roughness

KW - Low-energy implantation

KW - Positron annihilation Doppler broadening technique

KW - Silicon diodes

KW - Ultra-shallow junctions

UR - http://www.scopus.com/inward/record.url?scp=10644258752&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.07.012

DO - 10.1016/j.mseb.2004.07.012

M3 - Article

VL - 114-115

SP - 109

EP - 113

JO - Materials science & engineering B

JF - Materials science & engineering B

SN - 0921-5107

IS - SPEC. ISS.

ER -