Abstract
Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.
| Original language | English |
|---|---|
| Pages (from-to) | 109-113 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 114-115 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - 30 Dec 2004 |
| Externally published | Yes |
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Keywords
- Excimer-laser annealing
- Laser-induced surface roughness
- Low-energy implantation
- Positron annihilation Doppler broadening technique
- Silicon diodes
- Ultra-shallow junctions
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Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes. / Burtsev, A.; Schut, H.; Nanver, L. K.; Van Veen, A.; Slabbekoorn, J.; Scholtes, T. L.M.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 114-115, No. SPEC. ISS., 30.12.2004, p. 109-113.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Surface morphologies of excimer-laser annealed BF2+ implanted Si diodes
AU - Burtsev, A.
AU - Schut, H.
AU - Nanver, L. K.
AU - Van Veen, A.
AU - Slabbekoorn, J.
AU - Scholtes, T. L.M.
PY - 2004/12/30
Y1 - 2004/12/30
N2 - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.
AB - Laser-induced surface roughness and damage formation in ultra-shallow n+-p and p+-n junctions, formed by low energy (5 keV) As+ and BF2+ implantations in Si, respectively, with a dose of 1 × 1015 cm-2 have been investigated by atomic force microscopy (AFM) and Positron Annihilation Doppler Broadening (PADB) technique. The Si surface roughness is found to increase with laser energy density, and reaches a value of 3.5 rm after excimer-laser annealing (ELA) at 1100 mJ/cm2. However, anomalous behavior is witnessed for BF2+-implanted Si sample at 800 mJ/cm 2, at which energy very high surface protrusions up to 9nm high are observed. By PADB this behavior is correlated to extensive deep microcavity formation in the Si whereby the volatile F2 fraction can accumulate and evaporate/out-diffuse, leading to Si surface roughening. The consequences for the diode characteristics and contact resistivity are examined.
KW - Excimer-laser annealing
KW - Laser-induced surface roughness
KW - Low-energy implantation
KW - Positron annihilation Doppler broadening technique
KW - Silicon diodes
KW - Ultra-shallow junctions
UR - http://www.scopus.com/inward/record.url?scp=10644258752&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2004.07.012
DO - 10.1016/j.mseb.2004.07.012
M3 - Article
VL - 114-115
SP - 109
EP - 113
JO - Materials science & engineering B
JF - Materials science & engineering B
SN - 0921-5107
IS - SPEC. ISS.
ER -