Surface oxide content examination of capping boron layers in UV photodetectors

V. Mohammadi, P. R. Rao, R. W.E. Van De Kruijs, S. Nihtianov

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm2 [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherIEEE
Pages73-74
Number of pages2
Volume2015-August
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 3 Aug 2015
Event73rd Annual Device Research Conference 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015
Conference number: 73

Conference

Conference73rd Annual Device Research Conference 2015
Abbreviated titleDRC 2015
CountryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • Atomic layer deposition
  • Atomic measurements
  • Boron
  • Doping
  • Optical imaging

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