Surface oxide content examination of capping boron layers in UV photodetectors

V. Mohammadi; P. R. Rao; R. W.E. Van De Kruijs; S. Nihtianov

doi:10.1109/DRC.2015.7175562

Surface oxide content examination of capping boron layers in UV photodetectors

V. Mohammadi, P. R. Rao, R. W.E. Van De Kruijs, S. Nihtianov

XUV Optics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm² [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.

Original language	English
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	IEEE
Pages	73-74
Number of pages	2
Volume	2015-August
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175562
Publication status	Published - 3 Aug 2015
Event	73rd Annual Device Research Conference 2015 - Columbus, United States Duration: 21 Jun 2015 → 24 Jun 2015 Conference number: 73

Conference

Conference	73rd Annual Device Research Conference 2015
Abbreviated title	DRC 2015
Country/Territory	United States
City	Columbus
Period	21/06/15 → 24/06/15

Keywords

Atomic layer deposition
Atomic measurements
Boron
Doping
Optical imaging

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10.1109/DRC.2015.7175562

Cite this

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title = "Surface oxide content examination of capping boron layers in UV photodetectors",

abstract = "The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm2 [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.",

keywords = "Atomic layer deposition, Atomic measurements, Boron, Doping, Optical imaging",

author = "V. Mohammadi and Rao, {P. R.} and {Van De Kruijs}, {R. W.E.} and S. Nihtianov",

year = "2015",

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doi = "10.1109/DRC.2015.7175562",

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T1 - Surface oxide content examination of capping boron layers in UV photodetectors

AU - Mohammadi, V.

AU - Rao, P. R.

AU - Van De Kruijs, R. W.E.

AU - Nihtianov, S.

N1 - Conference code: 73

PY - 2015/8/3

Y1 - 2015/8/3

N2 - The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm2 [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.

AB - The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm2 [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.

KW - Atomic layer deposition

KW - Atomic measurements

KW - Boron

KW - Doping

KW - Optical imaging

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M3 - Conference contribution

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VL - 2015-August

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EP - 74

BT - 73rd Annual Device Research Conference, DRC 2015

PB - IEEE

T2 - 73rd Annual Device Research Conference 2015

Y2 - 21 June 2015 through 24 June 2015

ER -

Surface oxide content examination of capping boron layers in UV photodetectors

Abstract

Conference

Keywords

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