Abstract
The capability of Si-based PureB photodetectors to withstand UV radiation is an unconditional requirement for a variety of industrial applications. A good example can be found in the next-generation 13.5-nm lithography systems [1]: UV detectors used to optimize the imaging performance will be exposed to EUV radiation levels as high as a few mJ/cm2 [2]. It has been demonstrated in [3] that only 2-nm thick pure boron layer can be resistant to detrimental environments. Such boron layer can be added to fully processed BSI/FSI CMOS imagers as end-of-line capping layer, to passivate their surface, as well as to increase the spectral range of their sensitivity from IR down to soft x-ray. In both applications negligible degradation of the electrical and optical behavior of the photodiodes/devices is highly demanded.
Original language | English |
---|---|
Title of host publication | 73rd Annual Device Research Conference, DRC 2015 |
Publisher | IEEE |
Pages | 73-74 |
Number of pages | 2 |
Volume | 2015-August |
ISBN (Electronic) | 9781467381345 |
DOIs | |
Publication status | Published - 3 Aug 2015 |
Event | 73rd Annual Device Research Conference 2015 - Columbus, United States Duration: 21 Jun 2015 → 24 Jun 2015 Conference number: 73 |
Conference
Conference | 73rd Annual Device Research Conference 2015 |
---|---|
Abbreviated title | DRC 2015 |
Country/Territory | United States |
City | Columbus |
Period | 21/06/15 → 24/06/15 |
Keywords
- Atomic layer deposition
- Atomic measurements
- Boron
- Doping
- Optical imaging