Surface-passivated high-resistivity silicon substrates for RFICs

B. Rong*, J. N. Burghartz, L. K. Nanver, B. Rejaei, M. Van Der Zwan

*Corresponding author for this work

Research output: Contribution to journalLetterAcademicpeer-review

98 Citations (Scopus)


Surface passivation of high-resistivity silicon (HRS) by amorphous silicon thin-film deposition is demonstrated as a novel technique for establishing HRS as a microwave substrate. Metal-oxide-silicon (MOS) capacitor measurements are used to characterize the silicon surface properties. An increase of the quality factor (Q) of a 10-nH spiral inductor by 40% to Q = 15 and a 6.5-dB lower attenuation of a coplanar wave guide (CPW) at 17 GHz indicate the beneficial effect of the surface passivation for radio frequency (RF) and microwave applications. Regarding CPW attenuation, a nonpassivated 3000-Ω · cm substrate is equivalent to a 70-Ω · cm passivated substrate. Surface-passivated HRS, having minimum losses, a high permittivity, and a high thermal conductivity, qualifies as a close-to-ideal radio frequency and microwave substrate.

Original languageEnglish
Pages (from-to)176-178
Number of pages3
JournalIEEE electron device letters
Issue number4
Publication statusPublished - 1 Apr 2004
Externally publishedYes


  • Attenuation
  • Conductivity
  • Coplanar waveguides
  • Dielectric losses
  • Eddy currents
  • Excimer lasers
  • HF receivers
  • HF transmitters
  • High-frequency (HF) measurements
  • Inductors
  • Integrated circuit doping
  • Loss measurement
  • Losses
  • Lossless circuits
  • Magnetic fields
  • Microwave circuits
  • Microwave technology
  • Mobile communication
  • Monolithic microwave integrated circuits (MMICs)
  • Q factor
  • Scattering parameters
  • Semiconductor device fabrication
  • Semiconductor materials
  • Silicon
  • Transmission lines


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