Surface stress anisotropy of Ge(001)

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Abstract

By analyzing the equilibrium shape of vacancy islands on the Ge(001) surface we have determined the surface stress anisotropy, i.e., the difference between the compressive stress component along the substrate dimer rows and the tensile stress component perpendicular to the substrate dimer rows. In order to extract the surface stress anisotropy we have used a model recently put forward by Li et al. [Phys. Rev. Lett. 85, 1922 (2000)]. The surface stress anisotropy of the clean Ge(001) surface is found to be 80±30 meV/A2. This value is comparable to the surface stress anisotropy of the closely related Si(001) surface.
Original languageEnglish
Article number196105
Number of pages4
JournalPhysical review letters
Volume88
Issue number19
DOIs
Publication statusPublished - 13 May 2002

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anisotropy
dimers
tensile stress

Keywords

  • METIS-206883
  • IR-43561

Cite this

@article{0537d6ef632f48018011fd3c9db864ae,
title = "Surface stress anisotropy of Ge(001)",
abstract = "By analyzing the equilibrium shape of vacancy islands on the Ge(001) surface we have determined the surface stress anisotropy, i.e., the difference between the compressive stress component along the substrate dimer rows and the tensile stress component perpendicular to the substrate dimer rows. In order to extract the surface stress anisotropy we have used a model recently put forward by Li et al. [Phys. Rev. Lett. 85, 1922 (2000)]. The surface stress anisotropy of the clean Ge(001) surface is found to be 80±30 meV/A2. This value is comparable to the surface stress anisotropy of the closely related Si(001) surface.",
keywords = "METIS-206883, IR-43561",
author = "Middel, {M. T.} and Zandvliet, {H. J.W.} and Bene Poelsema",
year = "2002",
month = "5",
day = "13",
doi = "10.1103/PhysRevLett.88.196105",
language = "English",
volume = "88",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "19",

}

Surface stress anisotropy of Ge(001). / Middel, M. T.; Zandvliet, H. J.W.; Poelsema, Bene.

In: Physical review letters, Vol. 88, No. 19, 196105, 13.05.2002.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Surface stress anisotropy of Ge(001)

AU - Middel, M. T.

AU - Zandvliet, H. J.W.

AU - Poelsema, Bene

PY - 2002/5/13

Y1 - 2002/5/13

N2 - By analyzing the equilibrium shape of vacancy islands on the Ge(001) surface we have determined the surface stress anisotropy, i.e., the difference between the compressive stress component along the substrate dimer rows and the tensile stress component perpendicular to the substrate dimer rows. In order to extract the surface stress anisotropy we have used a model recently put forward by Li et al. [Phys. Rev. Lett. 85, 1922 (2000)]. The surface stress anisotropy of the clean Ge(001) surface is found to be 80±30 meV/A2. This value is comparable to the surface stress anisotropy of the closely related Si(001) surface.

AB - By analyzing the equilibrium shape of vacancy islands on the Ge(001) surface we have determined the surface stress anisotropy, i.e., the difference between the compressive stress component along the substrate dimer rows and the tensile stress component perpendicular to the substrate dimer rows. In order to extract the surface stress anisotropy we have used a model recently put forward by Li et al. [Phys. Rev. Lett. 85, 1922 (2000)]. The surface stress anisotropy of the clean Ge(001) surface is found to be 80±30 meV/A2. This value is comparable to the surface stress anisotropy of the closely related Si(001) surface.

KW - METIS-206883

KW - IR-43561

UR - http://www.scopus.com/inward/record.url?scp=85038340490&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.88.196105

DO - 10.1103/PhysRevLett.88.196105

M3 - Article

VL - 88

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 19

M1 - 196105

ER -