Abstract
Guidelines for optimising the switching behaviour of low-voltage (LV) n-channel trench MOSFETs are presented, with emphasis on the geometry and the doping profile. In our optimisation we focussed on three parameters: the specific on-resistance (Rds,on), the gate-drain charge density (Qgd) and the off-state breakdown voltage. We obtained by simulations for the 30V control switch an Rds,on of less than 10 mΩmm2 and an Rds,onQgd of less than 15 mΩ.nC (applied voltage Vdd=12V). The result is a stripe cell structure with a trench width of 0.15 μm, a cell pitch of 1.0 μm. For the 25V synchronous rectifier we obtained in the same feature size figures-of-merit of 5 mΩ.mm2 and 17 mΩ.nC.
Original language | English |
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Title of host publication | Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics |
Publisher | IEEE |
Pages | 177-180 |
Number of pages | 4 |
ISBN (Print) | 0-7803-7318-9 |
DOIs | |
Publication status | Published - 1 Jan 2002 |
Externally published | Yes |
Event | 14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, United States Duration: 4 Jun 2002 → 7 Jun 2002 Conference number: 14 |
Conference
Conference | 14th International Symposium on Power Semiconductor Devices and IC's 2002 |
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Abbreviated title | ISPSD 2002 |
Country/Territory | United States |
City | Santa Fe |
Period | 4/06/02 → 7/06/02 |