Synthesis and Characterization of Boron Thin Films Using Chemical and Physical Vapor Depositions

Bart Schurink*, Wesley van den Beld, Roald M. Tiggelaar*, Robbert W.E. van de Kruijs, F. Bijkerk

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
285 Downloads (Pure)


Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron thin films are realized by a number of physical and chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced chemical vapor deposition (CVD), thermal/non-plasma CVD, remote plasma CVD and atmospheric pressure CVD. Various physical, mechanical and chemical characteristics of these boron thin films are investigated, i.e., deposition rate, uniformity, roughness, stress, composition, defectivity and chemical resistance. Boron films realized by plasma enhanced chemical vapor deposition (PECVD) are found to be inert for conventional wet chemical etchants and have the lowest amount of defects, which makes this the best candidate to be integrated into the micro-fabrication processes. By varying the deposition parameters in the PECVD process, the influences of plasma power, pressure and precursor inflow on the deposition rate and intrinsic stress are further explored. Utilization of PECVD boron films as hard mask for wet etching is demonstrated by means of patterning followed by selective structuring of the silicon substrate, which shows that PECVD boron thin films can be successfully applied for micro-fabrication.
Original languageEnglish
Article number685
Issue number5
Early online date16 May 2022
Publication statusPublished - May 2022


  • Boron
  • Thin film
  • CVD
  • PVD
  • Deposition rate
  • Thickness uniformity
  • Intrinsic stress
  • Chemical resistance
  • UT-Gold-D


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