Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

N. Stavitski, M.J.H. van Dal, A. Lauwers, C. Vrancken, Alexeij Y. Kovalgin, Robertus A.M. Wolters

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    Abstract

    We present the data on specific silicide-to-silicon contact resistance (�?c) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi–silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.
    Original languageUndefined
    Article number10.1109/LED.2008.917934
    Pages (from-to)378-381
    Number of pages4
    JournalIEEE electron device letters
    Volume29
    Issue number4952/4
    DOIs
    Publication statusPublished - 1 Apr 2008

    Keywords

    • IR-64717
    • SC-ICF: Integrated Circuit Fabrication
    • EWI-12263
    • METIS-250946

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