TY - JOUR
T1 - Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range
AU - Stavitski, N.
AU - van Dal, M.J.H.
AU - Lauwers, A.
AU - Vrancken, C.
AU - Kovalgin, Alexeij Y.
AU - Wolters, Robertus A.M.
N1 - http://eprints.ewi.utwente.nl/12263
PY - 2008/4/1
Y1 - 2008/4/1
N2 - We present the data on specific silicide-to-silicon contact resistance (�?c) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi–silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.
AB - We present the data on specific silicide-to-silicon contact resistance (�?c) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modern technologies. In addition, no database for NiSi–silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference.
KW - IR-64717
KW - SC-ICF: Integrated Circuit Fabrication
KW - EWI-12263
KW - METIS-250946
U2 - 10.1109/LED.2008.917934
DO - 10.1109/LED.2008.917934
M3 - Article
VL - 29
SP - 378
EP - 381
JO - IEEE electron device letters
JF - IEEE electron device letters
SN - 0741-3106
IS - 4952/4
M1 - 10.1109/LED.2008.917934
ER -