Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn

B.R. de Jong; H.V. Jansen; M.J. de Boer; G.J.M. Krijnen

Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn

B.R. de Jong^*, H.V. Jansen, M.J. de Boer, G.J.M. Krijnen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

105 Downloads (Pure)

Abstract

A study is performed to obtain insight in etch- profile tailoring of high aspect ratio trenches (2 μm wide and 40 μm deep) to achieve void-free refilling with LPCVD SiRN. The trench profile obtained with Bosch DRIE is the most important factor determining formation of voids. Various Bosch recipes are characterized with respect to profile determining features and its applicability in void-free refilling.

Original language	English
Title of host publication	Proceedings of the 16th MME MicroMechanics Europe Workshop
Subtitle of host publication	4-6 September 2005, Göteborg, Sweden
Editors	Peter Enoksson
Place of Publication	Göteborg, Sweden
Publisher	Chalmers University of Technology
Pages	1-4
Number of pages	4
ISBN (Print)	91-631-7553-3
Publication status	Published - 2005
Event	16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005 Conference number: 16

Workshop

Workshop	16th MicroMechanics Europe Workshop, MME 2005
Abbreviated title	MME
Country/Territory	Sweden
City	Göteborg
Period	4/09/05 → 6/09/05

Keywords

Silicon
Trench filling
Scalloping
Nitride
LPCVD
Void
Bosch etching

Access to Document

DeJong2005tailoredFinal published version, 2.51 MB

Cite this

@inproceedings{83f9ed6d8ee94b2db4f6920933178196,

title = "Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn",

abstract = "A study is performed to obtain insight in etch- profile tailoring of high aspect ratio trenches (2 μm wide and 40 μm deep) to achieve void-free refilling with LPCVD SiRN. The trench profile obtained with Bosch DRIE is the most important factor determining formation of voids. Various Bosch recipes are characterized with respect to profile determining features and its applicability in void-free refilling.",

keywords = "Silicon, Trench filling, Scalloping, Nitride, LPCVD, Void, Bosch etching",

author = "{de Jong}, B.R. and H.V. Jansen and {de Boer}, M.J. and G.J.M. Krijnen",

note = "The Dutch government program IOP Precision Technology; 16th MicroMechanics Europe Workshop, MME 2005, MME ; Conference date: 04-09-2005 Through 06-09-2005",

year = "2005",

language = "English",

isbn = "91-631-7553-3",

pages = "1--4",

editor = "Peter Enoksson",

booktitle = "Proceedings of the 16th MME MicroMechanics Europe Workshop",

publisher = "Chalmers University of Technology",

address = "Sweden",

}

de Jong, BR, Jansen, HV, de Boer, MJ & Krijnen, GJM 2005, Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn. in P Enoksson (ed.), Proceedings of the 16th MME MicroMechanics Europe Workshop: 4-6 September 2005, Göteborg, Sweden. Chalmers University of Technology, Göteborg, Sweden, pp. 1-4, 16th MicroMechanics Europe Workshop, MME 2005, Göteborg, Sweden, 4/09/05.

Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn. / de Jong, B.R.; Jansen, H.V.; de Boer, M.J. et al.
Proceedings of the 16th MME MicroMechanics Europe Workshop: 4-6 September 2005, Göteborg, Sweden. ed. / Peter Enoksson. Göteborg, Sweden: Chalmers University of Technology, 2005. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn

AU - de Jong, B.R.

AU - Jansen, H.V.

AU - de Boer, M.J.

AU - Krijnen, G.J.M.

N1 - Conference code: 16

PY - 2005

Y1 - 2005

N2 - A study is performed to obtain insight in etch- profile tailoring of high aspect ratio trenches (2 μm wide and 40 μm deep) to achieve void-free refilling with LPCVD SiRN. The trench profile obtained with Bosch DRIE is the most important factor determining formation of voids. Various Bosch recipes are characterized with respect to profile determining features and its applicability in void-free refilling.

AB - A study is performed to obtain insight in etch- profile tailoring of high aspect ratio trenches (2 μm wide and 40 μm deep) to achieve void-free refilling with LPCVD SiRN. The trench profile obtained with Bosch DRIE is the most important factor determining formation of voids. Various Bosch recipes are characterized with respect to profile determining features and its applicability in void-free refilling.

KW - Silicon

KW - Trench filling

KW - Scalloping

KW - Nitride

KW - LPCVD

KW - Void

KW - Bosch etching

M3 - Conference contribution

SN - 91-631-7553-3

SP - 1

EP - 4

BT - Proceedings of the 16th MME MicroMechanics Europe Workshop

A2 - Enoksson, Peter

PB - Chalmers University of Technology

CY - Göteborg, Sweden

T2 - 16th MicroMechanics Europe Workshop, MME 2005

Y2 - 4 September 2005 through 6 September 2005

ER -

Tailored Etch-Profiles of high aspect ratio trenches to prevent voids after refill with LPCVD sirn

Abstract

Workshop

Keywords

Access to Document

Fingerprint

Cite this