Tailoring strain in microelectronic devices

T. van Hemert

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    109 Downloads (Pure)

    Abstract

    The central device of this thesis is the transistor. It acts like a faucet, but hen for electric charge. There is a connection that is called the source, just like the water company. And the charge flows into the drain. Finally there is a handle, here called the gate, to control the flow of charge. The transistor is not an ideal faucet for electrons. For example, even when the gate is closed a very small current of electric charge flows through the device. This is the leakage current. In many modern electronics integrated circuits are used which may contain more than a billion of these transistors. Even if only a small leakage current flows through each of these transistors this may sum up to an altogether large leakage current. This leakage current is responsible for the static, or standby, power consumption of integrated circuits. Nowadays this static power is becoming one of the major energy consumers in integrated circuits.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Schmitz, Jurriaan , Supervisor
    • Hueting, Ray, Advisor
    Thesis sponsors
    Award date6 Dec 2013
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-1169-8
    DOIs
    Publication statusPublished - 6 Dec 2013

    Keywords

    • EWI-24055
    • IR-88032
    • METIS-299024

    Cite this

    van Hemert, T. (2013). Tailoring strain in microelectronic devices. Enschede: University of Twente. https://doi.org/10.3990/1.9789036511698