Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors

Carmen Bartic, Henricus V. Jansen, Andrew Campitelli, Staf Borghs

Research output: Contribution to journalArticleAcademicpeer-review

152 Citations (Scopus)

Abstract

In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation. Being a relatively low-temperature process, this method is particularly suitable for organic thin-film transistor fabrication on plastic substrates. Deposition and patterning are achieved in one step by the use of shadow masks. The dielectric can be evaporated on top of the semiconducting layer. In this way a large variety of structures can be realized. Poly(3-hexylthiophene) was used as semiconducting material in the transistor structure. Such transistors are operating at voltages smaller than −3 V. Having a high dielectric constant (r=21), Ta2O5 facilitates the charge carrier accumulation in the transistor channel at much lower electrical fields. The properties of the dielectric material as well as the operation of the organic transistors with a Ta2O5 gate dielectric are discussed.
Original languageUndefined
Pages (from-to)65-72
Number of pages8
JournalOrganic electronics
Volume3
Issue number2
DOIs
Publication statusPublished - Jun 2002

Keywords

  • Low voltage
  • Poly(3-hexylthiophene)
  • IR-74815
  • Organic transistor
  • EWI-18839
  • Ta2O5

Cite this

Bartic, Carmen ; Jansen, Henricus V. ; Campitelli, Andrew ; Borghs, Staf. / Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors. In: Organic electronics. 2002 ; Vol. 3, No. 2. pp. 65-72.
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abstract = "In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation. Being a relatively low-temperature process, this method is particularly suitable for organic thin-film transistor fabrication on plastic substrates. Deposition and patterning are achieved in one step by the use of shadow masks. The dielectric can be evaporated on top of the semiconducting layer. In this way a large variety of structures can be realized. Poly(3-hexylthiophene) was used as semiconducting material in the transistor structure. Such transistors are operating at voltages smaller than −3 V. Having a high dielectric constant (r=21), Ta2O5 facilitates the charge carrier accumulation in the transistor channel at much lower electrical fields. The properties of the dielectric material as well as the operation of the organic transistors with a Ta2O5 gate dielectric are discussed.",
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Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors. / Bartic, Carmen; Jansen, Henricus V.; Campitelli, Andrew; Borghs, Staf.

In: Organic electronics, Vol. 3, No. 2, 06.2002, p. 65-72.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors

AU - Bartic, Carmen

AU - Jansen, Henricus V.

AU - Campitelli, Andrew

AU - Borghs, Staf

PY - 2002/6

Y1 - 2002/6

N2 - In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation. Being a relatively low-temperature process, this method is particularly suitable for organic thin-film transistor fabrication on plastic substrates. Deposition and patterning are achieved in one step by the use of shadow masks. The dielectric can be evaporated on top of the semiconducting layer. In this way a large variety of structures can be realized. Poly(3-hexylthiophene) was used as semiconducting material in the transistor structure. Such transistors are operating at voltages smaller than −3 V. Having a high dielectric constant (r=21), Ta2O5 facilitates the charge carrier accumulation in the transistor channel at much lower electrical fields. The properties of the dielectric material as well as the operation of the organic transistors with a Ta2O5 gate dielectric are discussed.

AB - In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation. Being a relatively low-temperature process, this method is particularly suitable for organic thin-film transistor fabrication on plastic substrates. Deposition and patterning are achieved in one step by the use of shadow masks. The dielectric can be evaporated on top of the semiconducting layer. In this way a large variety of structures can be realized. Poly(3-hexylthiophene) was used as semiconducting material in the transistor structure. Such transistors are operating at voltages smaller than −3 V. Having a high dielectric constant (r=21), Ta2O5 facilitates the charge carrier accumulation in the transistor channel at much lower electrical fields. The properties of the dielectric material as well as the operation of the organic transistors with a Ta2O5 gate dielectric are discussed.

KW - Low voltage

KW - Poly(3-hexylthiophene)

KW - IR-74815

KW - Organic transistor

KW - EWI-18839

KW - Ta2O5

U2 - 10.1016/S1566-1199(02)00034-4

DO - 10.1016/S1566-1199(02)00034-4

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