TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS

Satadal  Dutta; Luis Orbe; Jurriaan  Schmitz

doi:10.1109/NUSOD.2017.8009969

TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS

Satadal Dutta, Luis Orbe, Jurriaan Schmitz

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Abstract

A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.

Original language	English
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2017.8009969
Publication status	Published - 15 Aug 2017
Event	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: 24 Jul 2017 → 28 Jul 2017 Conference number: 17

Conference

Conference	17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
Abbreviated title	NUSOD
Country/Territory	Denmark
City	Copenhagen
Period	24/07/17 → 28/07/17

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title = "TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS",

abstract = "A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.",

author = "Satadal Dutta and Luis Orbe and Jurriaan Schmitz",

year = "2017",

month = aug,

day = "15",

doi = "10.1109/NUSOD.2017.8009969",

language = "English",

note = "17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, NUSOD ; Conference date: 24-07-2017 Through 28-07-2017",

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T1 - TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS

AU - Dutta, Satadal

AU - Orbe, Luis

AU - Schmitz, Jurriaan

N1 - Conference code: 17

PY - 2017/8/15

Y1 - 2017/8/15

N2 - A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.

AB - A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.

U2 - 10.1109/NUSOD.2017.8009969

DO - 10.1109/NUSOD.2017.8009969

M3 - Paper

T2 - 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017

Y2 - 24 July 2017 through 28 July 2017

ER -

TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS

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