A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.
|Number of pages||2|
|Publication status||Published - 15 Aug 2017|
|Event||17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark|
Duration: 24 Jul 2017 → 28 Jul 2017
Conference number: 17
|Conference||17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017|
|Period||24/07/17 → 28/07/17|