TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS

Satadal Dutta, Luis Orbe, Jurriaan Schmitz

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    Abstract

    A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm - 1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.
    Original languageEnglish
    Number of pages2
    DOIs
    Publication statusPublished - 15 Aug 2017
    Event17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark
    Duration: 24 Jul 201728 Jul 2017
    Conference number: 17

    Conference

    Conference17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
    Abbreviated titleNUSOD
    CountryDenmark
    CityCopenhagen
    Period24/07/1728/07/17

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    Dutta, S., Orbe, L., & Schmitz, J. (2017). TCAD analysis of wide-spectrum waveguide in high-voltage SOI CMOS. Paper presented at 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017, Copenhagen, Denmark. https://doi.org/10.1109/NUSOD.2017.8009969