Temperature acceleration of thin gate-oxide degradation

Cora Salm, V.E. Houtsma, F.G. Kuper, P.H. Woerlee

    Research output: Contribution to conferencePaper

    Abstract

    The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.
    Original languageUndefined
    Pages174-177
    Number of pages4
    Publication statusPublished - 2001
    Event4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands
    Duration: 28 Nov 200130 Nov 2001

    Workshop

    Workshop4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
    CountryNetherlands
    CityVeldhoven
    Period28/11/0130/11/01

    Keywords

    • IR-67785
    • EWI-15638
    • Gate oxide

    Cite this

    Salm, C., Houtsma, V. E., Kuper, F. G., & Woerlee, P. H. (2001). Temperature acceleration of thin gate-oxide degradation. 174-177. Paper presented at 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, Veldhoven, Netherlands.