The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.
|Number of pages||4|
|Publication status||Published - 2001|
|Event||4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands|
Duration: 28 Nov 2001 → 30 Nov 2001
|Workshop||4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001|
|Period||28/11/01 → 30/11/01|
- Gate oxide