Temperature acceleration of thin gate-oxide degradation

Cora Salm; V.E. Houtsma; F.G. Kuper; P.H. Woerlee

Temperature acceleration of thin gate-oxide degradation

Cora Salm
, V.E. Houtsma
, F.G. Kuper
, P.H. Woerlee

Research output: Contribution to conference › Paper

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Abstract

The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.

Original language	Undefined
Pages	174-177
Number of pages	4
Publication status	Published - 2001
Event	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands Duration: 28 Nov 2001 → 30 Nov 2001

Workshop

Workshop	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
Country/Territory	Netherlands
City	Veldhoven
Period	28/11/01 → 30/11/01

Keywords

IR-67785
EWI-15638
Gate oxide

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15638/01/salm.pdf

Cite this

@conference{e1f370eb3d6240d6a46f00582a202150,

title = "Temperature acceleration of thin gate-oxide degradation",

abstract = "The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.",

keywords = "IR-67785, EWI-15638, Gate oxide",

author = "Cora Salm and V.E. Houtsma and F.G. Kuper and P.H. Woerlee",

year = "2001",

language = "Undefined",

pages = "174--177",

note = "4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 ; Conference date: 28-11-2001 Through 30-11-2001",

}

TY - CONF

T1 - Temperature acceleration of thin gate-oxide degradation

AU - Salm, Cora

AU - Houtsma, V.E.

AU - Kuper, F.G.

AU - Woerlee, P.H.

PY - 2001

Y1 - 2001

N2 - The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.

AB - The temperature dependence of TBD and QBD of ultra-thin (3.9 nm thick) gate oxides was studied for p+-poly Si PMOS and n+-poly Si NMOS capacitors. It was observed that the temperature acceleration of TBD exhibits a non-Arrhenius behavior, meaning that no activation energy could be determined. Furthermore for p+ gate devices both TBD and QBD exhibit a stronger temperature dependence compared to n+ poly-Si MOS devices. Also the dependence on the gate voltage is much stronger. This might have consequences for the reliability of p+ gate devices under operating conditions.

KW - IR-67785

KW - EWI-15638

KW - Gate oxide

M3 - Paper

SP - 174

EP - 177

T2 - 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001

Y2 - 28 November 2001 through 30 November 2001

ER -