Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

Yu.M. Boguslavskij, M.A.J. Verhoeven, F.J.G. Roesthuis, G.J. Gerritsma, H. Rogalla

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Abstract

The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.
Original languageEnglish
Pages (from-to)1115-1116
Number of pages2
JournalPhysica B
Volume194-196
Issue number1
DOIs
Publication statusPublished - 1994
Event20th International Conference on Low Temperature Physics, LT-20 1993 - Eugene, United States
Duration: 4 Aug 199311 Aug 1993
Conference number: 20

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