The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.
|Number of pages||2|
|Publication status||Published - 1994|
|Event||20th International Conference on Low Temperature Physics, LT-20 1993 - Eugene, United States|
Duration: 4 Aug 1993 → 11 Aug 1993
Conference number: 20