Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

Yu.M. Boguslavskij; M.A.J. Verhoeven; F.J.G. Roesthuis; G.J. Gerritsma; H. Rogalla

doi:10.1016/0921-4526(94)90887-7

Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

Yu.M. Boguslavskij, M.A.J. Verhoeven, F.J.G. Roesthuis, G.J. Gerritsma, H. Rogalla

Faculty of Science and Technology

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Abstract

The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.

Original language	English
Pages (from-to)	1115-1116
Number of pages	2
Journal	Physica B
Volume	194-196
Issue number	1
DOIs	https://doi.org/10.1016/0921-4526(94)90887-7
Publication status	Published - 1994
Event	20th International Conference on Low Temperature Physics, LT-20 1993 - Eugene, United States Duration: 4 Aug 1993 → 11 Aug 1993 Conference number: 20

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@article{56e530993f154de2a5f55a98f62a96af,

title = "Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures",

abstract = "The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.",

author = "Yu.M. Boguslavskij and M.A.J. Verhoeven and F.J.G. Roesthuis and G.J. Gerritsma and H. Rogalla",

year = "1994",

doi = "10.1016/0921-4526(94)90887-7",

language = "English",

volume = "194-196",

pages = "1115--1116",

journal = "Physica B",

issn = "0921-4526",

publisher = "Elsevier",

number = "1",

note = "20th International Conference on Low Temperature Physics, LT-20 1993, LT-20 ; Conference date: 04-08-1993 Through 11-08-1993",

}

TY - JOUR

T1 - Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

AU - Boguslavskij, Yu.M.

AU - Verhoeven, M.A.J.

AU - Roesthuis, F.J.G.

AU - Gerritsma, G.J.

AU - Rogalla, H.

N1 - Conference code: 20

PY - 1994

Y1 - 1994

N2 - The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.

AB - The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.

U2 - 10.1016/0921-4526(94)90887-7

DO - 10.1016/0921-4526(94)90887-7

M3 - Article

SN - 0921-4526

VL - 194-196

SP - 1115

EP - 1116

JO - Physica B

JF - Physica B

IS - 1

T2 - 20th International Conference on Low Temperature Physics, LT-20 1993

Y2 - 4 August 1993 through 11 August 1993

ER -

Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

Abstract

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