Temperature antiquenching of the luminescence from capped CdSe quantum dots

Sander F. Wuister; Arie Van Houselt; Celso De Mello Donegá; Daniel Vanmaekelbergh; Andries Meijerink

doi:10.1002/anie.200353532

Temperature antiquenching of the luminescence from capped CdSe quantum dots

Sander F. Wuister, Arie Van Houselt, Celso De Mello Donegá, Daniel Vanmaekelbergh, Andries Meijerink^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

151 Citations (Scopus)

Abstract

Actively passivated: The surprising recovery of the luminescence intensity between 200 and 300 K for CdSe quantum dots gives insight into the importance of the interaction between the capping layer and the nanocrystal semiconductor. The vial on the left is at 160 K while the brightly luminescing solution on the right is at 300 K. These results show that the capping layer does not merely passivate the surface but plays an active role in surface reconstruction.

Original language	English
Pages (from-to)	3029-3033
Number of pages	5
Journal	Angewandte Chemie - International Edition
Volume	43
Issue number	23
DOIs	https://doi.org/10.1002/anie.200353532
Publication status	Published - 7 Jun 2004
Externally published	Yes

Keywords

Luminescence
Nanostructures
Quantum chemistry
Semiconductors

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10.1002/anie.200353532

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AU - Meijerink, Andries

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KW - Semiconductors

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Temperature antiquenching of the luminescence from capped CdSe quantum dots

Abstract

Keywords

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