Temperature antiquenching of the luminescence from capped CdSe quantum dots

Sander F. Wuister, Arie Van Houselt, Celso De Mello Donegá, Daniel Vanmaekelbergh, Andries Meijerink

Research output: Contribution to journalArticleAcademicpeer-review

117 Citations (Scopus)

Abstract

Actively passivated: The surprising recovery of the luminescence intensity between 200 and 300 K for CdSe quantum dots gives insight into the importance of the interaction between the capping layer and the nanocrystal semiconductor. The vial on the left is at 160 K while the brightly luminescing solution on the right is at 300 K. These results show that the capping layer does not merely passivate the surface but plays an active role in surface reconstruction.

Original languageEnglish
Pages (from-to)3029-3033
Number of pages5
JournalAngewandte Chemie - International Edition
Volume43
Issue number23
DOIs
Publication statusPublished - 7 Jun 2004
Externally publishedYes

Fingerprint

Surface reconstruction
Beam plasma interactions
Nanocrystals
Semiconductor quantum dots
Luminescence
Semiconductor materials
Recovery
Temperature

Keywords

  • Luminescence
  • Nanostructures
  • Quantum chemistry
  • Semiconductors

Cite this

Wuister, Sander F. ; Van Houselt, Arie ; De Mello Donegá, Celso ; Vanmaekelbergh, Daniel ; Meijerink, Andries. / Temperature antiquenching of the luminescence from capped CdSe quantum dots. In: Angewandte Chemie - International Edition. 2004 ; Vol. 43, No. 23. pp. 3029-3033.
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Temperature antiquenching of the luminescence from capped CdSe quantum dots. / Wuister, Sander F.; Van Houselt, Arie; De Mello Donegá, Celso; Vanmaekelbergh, Daniel; Meijerink, Andries.

In: Angewandte Chemie - International Edition, Vol. 43, No. 23, 07.06.2004, p. 3029-3033.

Research output: Contribution to journalArticleAcademicpeer-review

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