Temperature dependence of avalanche multiplication in spiked electric fields

M. R. Van den Berg*, L. K. Nanver, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.

Original languageEnglish
Title of host publication International Electron Devices Meeting 2000. Technical Digest
Pages79-81
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, United States
Duration: 10 Dec 200013 Dec 2000

Publication series

NameTechnical Digest - International Electron Devices Meeting
PublisherIEEE
ISSN (Print)0163-1918

Conference

Conference2000 IEEE International Electron Devices Meeting
CountryUnited States
CitySan Francisco
Period10/12/0013/12/00

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  • Cite this

    Van den Berg, M. R., Nanver, L. K., & Slotboom, J. W. (2000). Temperature dependence of avalanche multiplication in spiked electric fields. In International Electron Devices Meeting 2000. Technical Digest (pp. 79-81). (Technical Digest - International Electron Devices Meeting). https://doi.org/10.1109/IEDM.2000.904263