@inproceedings{577ca3caa82849a283196b963fa1032a,
title = "Temperature dependence of avalanche multiplication in spiked electric fields",
abstract = "The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.",
author = "{Van den Berg}, {M. R.} and Nanver, {L. K.} and Slotboom, {J. W.}",
year = "2000",
month = dec,
day = "1",
doi = "10.1109/IEDM.2000.904263",
language = "English",
isbn = "0-7803-6438-4",
series = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",
pages = "79--81",
booktitle = "International Electron Devices Meeting 2000. Technical Digest",
note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",
}