Temperature dependence of magnetocurrent in a magnetic tunnel transistor

B.G. Park, T. Banerjee, B.C. Min, Johannes G.M. Sanderink, J.C. Lodder, R. Jansen

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    The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.
    Original languageUndefined
    Pages (from-to)103701-1
    Number of pages4
    JournalJournal of Applied Physics
    Issue number103701
    Publication statusPublished - 2005


    • METIS-226849
    • EWI-5609
    • SMI-NE: From 2006 in EWI-NE
    • IR-63023

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