Temperature dependence of magnetocurrent in a magnetic tunnel transistor

B.G. Park; T. Banerjee; B.C. Min; Johannes G.M. Sanderink; J.C. Lodder; R. Jansen

doi:10.1063/1.2125120

Temperature dependence of magnetocurrent in a magnetic tunnel transistor

B.G. Park, T. Banerjee, B.C. Min, Johannes G.M. Sanderink, J.C. Lodder, R. Jansen

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Abstract

The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.

Original language	Undefined
Pages (from-to)	103701-1
Number of pages	4
Journal	Journal of Applied Physics
Volume	98
Issue number	103701
DOIs	https://doi.org/10.1063/1.2125120
Publication status	Published - 2005

Keywords

METIS-226849
SMI-SPINTRONICS
EWI-5609
SMI-NE: From 2006 in EWI-NE
IR-63023

Access to Document

10.1063/1.2125120

http://eprints.eemcs.utwente.nl/secure2/5609/01/PARK2005.PDF

Cite this

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title = "Temperature dependence of magnetocurrent in a magnetic tunnel transistor",

abstract = "The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80\% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29\% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.",

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T1 - Temperature dependence of magnetocurrent in a magnetic tunnel transistor

AU - Park, B.G.

AU - Banerjee, T.

AU - Min, B.C.

AU - Sanderink, Johannes G.M.

AU - Lodder, J.C.

AU - Jansen, R.

N1 - Imported from SMI Reference manager

PY - 2005

Y1 - 2005

N2 - The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.

AB - The temperature dependence of magnetocurrent MC and transfer ratio has been investigated in a magnetic tunnel transistor MTT with a ferromagnetic FM emitter of Co or Ni80Fe20. MTT devices of sizes ranging from 10 to 100 m in diameter were fabricated using a standard photolithography process and predefined Si substrates. This reduces the edge leakage current across the collector Schottky diode and enables room-temperature operation. For the MTT with both Co and Ni80Fe20 emitter, we obtain a MC of about 80% at room temperature. This corresponds to a tunnel spin polarization of the FM emitter/Al2O3 interface of 29% at 1 V, demonstrating that the tunnel current is still spin-polarized at a high bias voltage.

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KW - SMI-NE: From 2006 in EWI-NE

KW - IR-63023

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DO - 10.1063/1.2125120

M3 - Article

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