Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

R. Jansen, R. Vlutters, P.S. Anil Kumar, O.M.J. van 't Erve, S.D. Kim, J.C. Lodder

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.
    Original languageUndefined
    Pages (from-to)658-660
    Number of pages3
    JournalJournal of magnetism and magnetic materials
    Volume226-230
    Issue numberPart 1
    DOIs
    Publication statusPublished - 2001

    Keywords

    • SMI-NE: From 2006 in EWI-NE
    • METIS-203543
    • IR-62967
    • Semiconductors
    • Spin-dependent scattering
    • Spin valve
    • Spin waves
    • EWI-5466

    Cite this

    Jansen, R., Vlutters, R., Anil Kumar, P. S., van 't Erve, O. M. J., Kim, S. D., & Lodder, J. C. (2001). Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor. Journal of magnetism and magnetic materials, 226-230(Part 1), 658-660. https://doi.org/10.1016/S0304-8853(00)00772-1