Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

R. Jansen; R. Vlutters; P.S. Anil Kumar; O.M.J. van 't Erve; S.D. Kim; J.C. Lodder

doi:10.1016/S0304-8853(00)00772-1

Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

R. Jansen, R. Vlutters, P.S. Anil Kumar, O.M.J. van 't Erve, S.D. Kim, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

Original language	Undefined
Pages (from-to)	658-660
Number of pages	3
Journal	Journal of magnetism and magnetic materials
Volume	226-230
Issue number	Part 1
DOIs	https://doi.org/10.1016/S0304-8853(00)00772-1
Publication status	Published - 2001

Keywords

SMI-NE: From 2006 in EWI-NE
METIS-203543
IR-62967
Semiconductors
Spin-dependent scattering
Spin valve
Spin waves
EWI-5466

Access to Document

10.1016/S0304-8853(00)00772-1

http://eprints.eemcs.utwente.nl/secure2/5466/01/JANSEN2001A.PDF

Cite this

@article{53fb5b56c74b4b72942cfa9fe200ea6d,

title = "Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor",

abstract = "Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.",

keywords = "SMI-NE: From 2006 in EWI-NE, METIS-203543, IR-62967, Semiconductors, Spin-dependent scattering, Spin valve, Spin waves, EWI-5466",

author = "R. Jansen and R. Vlutters and {Anil Kumar}, P.S. and {van 't Erve}, O.M.J. and S.D. Kim and J.C. Lodder",

note = "Imported from SMI Reference manager",

year = "2001",

doi = "10.1016/S0304-8853(00)00772-1",

language = "Undefined",

volume = "226-230",

pages = "658--660",

journal = "Journal of magnetism and magnetic materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "Part 1",

}

TY - JOUR

T1 - Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

AU - Jansen, R.

AU - Vlutters, R.

AU - Anil Kumar, P.S.

AU - van 't Erve, O.M.J.

AU - Kim, S.D.

AU - Lodder, J.C.

N1 - Imported from SMI Reference manager

PY - 2001

Y1 - 2001

N2 - Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

AB - Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

KW - SMI-NE: From 2006 in EWI-NE

KW - METIS-203543

KW - IR-62967

KW - Semiconductors

KW - Spin-dependent scattering

KW - Spin valve

KW - Spin waves

KW - EWI-5466

U2 - 10.1016/S0304-8853(00)00772-1

DO - 10.1016/S0304-8853(00)00772-1

M3 - Article

SN - 0304-8853

VL - 226-230

SP - 658

EP - 660

JO - Journal of magnetism and magnetic materials

JF - Journal of magnetism and magnetic materials

IS - Part 1

ER -