In this work we study oxygen interstitial defects (Oi) in a silicon-technology-based microreactor with an integrated attenuated total internal reflection (ATR) crystal as a function of an externally applied potential by means of attenuated total internal reflection infrared spectroscopy (ATR-IR). A reduction of the 1727 cm–1 Oi IR absorption band is observed with increasing potential. We evidence that this band is related to the presence of Oi, which enables detection of Oi by ATR-IR spectroscopy. The observed reduction with increasing potential is ascribed to an increase in temperature, due to resistive heating of the silicon.
|Journal||Journal of physical chemistry C|
|Publication status||Published - 24 Oct 2013|