Temperature dependent metallic conductance above the mobility edge of a silicon inversion layer

H.H.J.M. Niederer, A.P.M. Matthey, M.J. Sparnaay

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Abstract

The temperature dependence of the conductance of an n-type inversion layer on a (100) silicon surface has been examined between 1.4K and 4.2K at electron densities at which the Fermi level is close above the mobility edge of the lowest sub-band. It can be explained by assuming a separate band of localised bound states from which electrons are thermally excited into the extended states of the sub-band. The absence of any noticeable change in the conductivity mobility demonstrates that the nature of the electron transport is preserved when the conductivity is lowered from 8*10-5mho to 2*10-5mho.
Original languageUndefined
Pages (from-to)4167
JournalJournal of Physics C: Solid State Physics
Volume14
Issue number28
DOIs
Publication statusPublished - 1981
Externally publishedYes

Keywords

  • IR-60538

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