Temperature effect on antenna protection strategy for plasma-process induced charging damage

Zhichun Wang; Andrea Scarpa; Sander M. Smits; Cora Salm; F.G. Kuper

doi:10.1109/PPID.2002.1042627

Temperature effect on antenna protection strategy for plasma-process induced charging damage

Zhichun Wang, Andrea Scarpa, Sander M. Smits, Cora Salm, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

14 Citations (Scopus)

259 Downloads (Pure)

Abstract

The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.

Original language	Undefined
Title of host publication	7th International symposium of Plasma Process-Induced Damage
Place of Publication	Piscataway
Publisher	American Vacuum Society
Pages	134-137
Number of pages	4
ISBN (Print)	0965157776
DOIs	https://doi.org/10.1109/PPID.2002.1042627
Publication status	Published - 10 Dec 2002
Event	7th International symposium of Plasma Process-Induced Damage: Proceedings of 7th International symposium of Plasma Process-Induced Damage - Maui, Hawaii, USA Duration: 6 Jun 2002 → 7 Jun 2002

Conference

Conference	7th International symposium of Plasma Process-Induced Damage
Period	6/06/02 → 7/06/02
Other	June 6-7, 2002

Keywords

METIS-206348
IR-43321
EWI-15602

Access to Document

10.1109/PPID.2002.1042627

Cite this

@inproceedings{093365b5c84c45e296b30aa9317ce6e1,

title = "Temperature effect on antenna protection strategy for plasma-process induced charging damage",

abstract = "The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.",

keywords = "METIS-206348, IR-43321, EWI-15602",

author = "Zhichun Wang and Andrea Scarpa and Smits, {Sander M.} and Cora Salm and F.G. Kuper",

year = "2002",

month = dec,

day = "10",

doi = "10.1109/PPID.2002.1042627",

language = "Undefined",

isbn = "0965157776",

pages = "134--137",

booktitle = "7th International symposium of Plasma Process-Induced Damage",

publisher = "American Vacuum Society",

address = "United States",

note = "7th International symposium of Plasma Process-Induced Damage ; Conference date: 06-06-2002 Through 07-06-2002",

}

Wang, Z, Scarpa, A, Smits, SM , Salm, C & Kuper, FG 2002, Temperature effect on antenna protection strategy for plasma-process induced charging damage. in 7th International symposium of Plasma Process-Induced Damage. American Vacuum Society, Piscataway, pp. 134-137, 7th International symposium of Plasma Process-Induced Damage, 6/06/02. https://doi.org/10.1109/PPID.2002.1042627

Temperature effect on antenna protection strategy for plasma-process induced charging damage. / Wang, Zhichun; Scarpa, Andrea; Smits, Sander M. et al.
7th International symposium of Plasma Process-Induced Damage. Piscataway: American Vacuum Society, 2002. p. 134-137.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Temperature effect on antenna protection strategy for plasma-process induced charging damage

AU - Wang, Zhichun

AU - Scarpa, Andrea

AU - Smits, Sander M.

AU - Salm, Cora

AU - Kuper, F.G.

PY - 2002/12/10

Y1 - 2002/12/10

N2 - The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.

AB - The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.

KW - METIS-206348

KW - IR-43321

KW - EWI-15602

U2 - 10.1109/PPID.2002.1042627

DO - 10.1109/PPID.2002.1042627

M3 - Conference contribution

SN - 0965157776

SP - 134

EP - 137

BT - 7th International symposium of Plasma Process-Induced Damage

PB - American Vacuum Society

CY - Piscataway

T2 - 7th International symposium of Plasma Process-Induced Damage

Y2 - 6 June 2002 through 7 June 2002

ER -