Temperature effect on antenna protection strategy for plasma-process induced charging damage

Zhichun Wang, Andrea Scarpa, Sander M. Smits, Cora Salm, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    13 Citations (Scopus)
    94 Downloads (Pure)

    Abstract

    The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.
    Original languageUndefined
    Title of host publication7th International symposium of Plasma Process-Induced Damage
    Place of PublicationPiscataway
    PublisherAmerican Vacuum Society
    Pages134-137
    Number of pages4
    ISBN (Print)0965157776
    DOIs
    Publication statusPublished - 10 Dec 2002
    Event7th International symposium of Plasma Process-Induced Damage: Proceedings of 7th International symposium of Plasma Process-Induced Damage - Maui, Hawaii, USA
    Duration: 6 Jun 20027 Jun 2002

    Conference

    Conference7th International symposium of Plasma Process-Induced Damage
    Period6/06/027/06/02
    OtherJune 6-7, 2002

    Keywords

    • METIS-206348
    • IR-43321
    • EWI-15602

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