Temperature effect on protection diode for plasma-process induced charging damage

Zhichun Wang; A. Scarpa; Sander M. Smits; F.G. Kuper; Cora Salm

Temperature effect on protection diode for plasma-process induced charging damage

Zhichun Wang, A. Scarpa, Sander M. Smits, F.G. Kuper, Cora Salm

Research output: Contribution to conference › Paper

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Abstract

In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.

Original language	Undefined
Pages	127-130
Number of pages	4
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

IR-67506
EWI-15603

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15603/01/SAFE02Wang-z.pdf

Cite this

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title = "Temperature effect on protection diode for plasma-process induced charging damage",

abstract = "In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.",

keywords = "IR-67506, EWI-15603",

author = "Zhichun Wang and A. Scarpa and Smits, {Sander M.} and F.G. Kuper and Cora Salm",

year = "2002",

month = nov,

day = "27",

language = "Undefined",

pages = "127--130",

note = "5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 ; Conference date: 27-11-2002 Through 28-11-2002",

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TY - CONF

T1 - Temperature effect on protection diode for plasma-process induced charging damage

AU - Wang, Zhichun

AU - Scarpa, A.

AU - Smits, Sander M.

AU - Kuper, F.G.

AU - Salm, Cora

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.

AB - In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.

KW - IR-67506

KW - EWI-15603

M3 - Paper

SP - 127

EP - 130

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -