Temperature effect on protection diode for plasma-process induced charging damage

Zhichun Wang, A. Scarpa, Sander M. Smits, F.G. Kuper, Cora Salm

    Research output: Contribution to conferencePaper

    Abstract

    In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.
    Original languageUndefined
    Pages127-130
    Number of pages4
    Publication statusPublished - 27 Nov 2002
    Event5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands
    Duration: 27 Nov 200228 Nov 2002
    Conference number: 5

    Workshop

    Workshop5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0228/11/02

    Keywords

    • IR-67506
    • EWI-15603

    Cite this

    Wang, Z., Scarpa, A., Smits, S. M., Kuper, F. G., & Salm, C. (2002). Temperature effect on protection diode for plasma-process induced charging damage. 127-130. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.