In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.
|Number of pages||4|
|Publication status||Published - 27 Nov 2002|
|Event||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands|
Duration: 27 Nov 2002 → 28 Nov 2002
Conference number: 5
|Workshop||5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002|
|Period||27/11/02 → 28/11/02|