Terahertz response of high-Tc ramp-type junctions on MgO

H. Myoren, J. Chen, K. Nakajima, T. Yamashita, D.H.A. Blank, H. Rogalla

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Abstract

We successfully fabricated the high-T-c ramp-type junctions with PrBa2Cu3-xGaxO7-delta (PBCGO:x=0.1, 0.4) barriers on MgO substrates. The junctions showed RSJ-like I-V curves with increased thermally and voltage activated conductivity. The IcRn products for these junctions scale very well with the Ga-doping. Using far infrared laser radiations, we confirmed terahertz (THz) responses of these junctions. The junction with PBCGO (x=0.4) had IcRn products of similar to 1mV at 4.2K and showed Shapiro steps with THz-wave irradiation, without any additional antenna structure.
Original languageEnglish
Title of host publicationApplied Superconductivity 1997
Subtitle of host publicationProceedings of EUCAS 1997, the Third European Conference on Applied Superconductivity, held in the Netherlands, 30 June-3 July 1997
EditorsH. Rogalla, D.H.A. Blank
Place of PublicationBristol
PublisherInstitute of Physics Publishing
Pages385-388
Number of pages4
ISBN (Print)9780750304870, 9780750304856, 9780750304863
Publication statusPublished - 19 Dec 1997
Event3rd European Conference on Applied Superconductivity, EUCAS 1997 - Veldhoven, Netherlands
Duration: 30 Jun 19973 Jul 1997
Conference number: 3

Conference

Conference3rd European Conference on Applied Superconductivity, EUCAS 1997
Abbreviated titleEUCAS
CountryNetherlands
CityVeldhoven
Period30/06/973/07/97

Keywords

  • IR-25625
  • METIS-130427

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