Test structure design considerations for RF-CV measurements on leaky dielectrics

J. Schmitz; F.N. Cubaynes; R.J. Havens; R. de Kort; A.J. Scholten; L.F. Tiemeijer

doi:10.1109/ICMTS.2003.1197458

Test structure design considerations for RF-CV measurements on leaky dielectrics

J. Schmitz, F.N. Cubaynes, R.J. Havens, R. de Kort, A.J. Scholten, L.F. Tiemeijer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

159 Downloads (Pure)

Abstract

We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

Original language	English
Title of host publication	ICMTS 2003
Subtitle of host publication	Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	181-185
Number of pages	5
ISBN (Print)	0-7803-7653-6
DOIs	https://doi.org/10.1109/ICMTS.2003.1197458
Publication status	Published - 7 May 2003
Event	16th International Conference on Microelectronic Test Structures, ICMTS 2003 - Monterey, United States Duration: 17 Mar 2003 → 20 Mar 2003 Conference number: 16 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog03.html

Conference

Conference	16th International Conference on Microelectronic Test Structures, ICMTS 2003
Abbreviated title	ICMTS
Country/Territory	United States
City	Monterey
Period	17/03/03 → 20/03/03
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog03.html

Keywords

Integrated circuit design
Capacitance
CMOS integrated circuits
Dielectric thin films

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10.1109/ICMTS.2003.1197458

2003_proc_icmts_schmitzSubmitted version, 233 KBLicence: Unspecified

Cite this

Schmitz, J., Cubaynes, F. N., Havens, R. J., de Kort, R., Scholten, A. J., & Tiemeijer, L. F. (2003). Test structure design considerations for RF-CV measurements on leaky dielectrics. In ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California (pp. 181-185). IEEE. https://doi.org/10.1109/ICMTS.2003.1197458

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title = "Test structure design considerations for RF-CV measurements on leaky dielectrics",

abstract = "We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.",

keywords = "Integrated circuit design, Capacitance, CMOS integrated circuits, Dielectric thin films",

author = "J. Schmitz and F.N. Cubaynes and R.J. Havens and {de Kort}, R. and A.J. Scholten and L.F. Tiemeijer",

year = "2003",

month = may,

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doi = "10.1109/ICMTS.2003.1197458",

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pages = "181--185",

booktitle = "ICMTS 2003",

publisher = "IEEE",

address = "United States",

note = "16th International Conference on Microelectronic Test Structures, ICMTS 2003, ICMTS ; Conference date: 17-03-2003 Through 20-03-2003",

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Schmitz, J, Cubaynes, FN, Havens, RJ, de Kort, R, Scholten, AJ & Tiemeijer, LF 2003, Test structure design considerations for RF-CV measurements on leaky dielectrics. in ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. IEEE, Piscataway, NJ, pp. 181-185, 16th International Conference on Microelectronic Test Structures, ICMTS 2003, Monterey, California, United States, 17/03/03. https://doi.org/10.1109/ICMTS.2003.1197458

Test structure design considerations for RF-CV measurements on leaky dielectrics. / Schmitz, J.; Cubaynes, F.N.; Havens, R.J. et al.
ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. Piscataway, NJ: IEEE, 2003. p. 181-185.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Test structure design considerations for RF-CV measurements on leaky dielectrics

AU - Schmitz, J.

AU - Cubaynes, F.N.

AU - Havens, R.J.

AU - de Kort, R.

AU - Scholten, A.J.

AU - Tiemeijer, L.F.

N1 - Conference code: 16

PY - 2003/5/7

Y1 - 2003/5/7

N2 - We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

AB - We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

KW - Integrated circuit design

KW - Capacitance

KW - CMOS integrated circuits

KW - Dielectric thin films

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U2 - 10.1109/ICMTS.2003.1197458

DO - 10.1109/ICMTS.2003.1197458

M3 - Conference contribution

SN - 0-7803-7653-6

SP - 181

EP - 185

BT - ICMTS 2003

PB - IEEE

CY - Piscataway, NJ

T2 - 16th International Conference on Microelectronic Test Structures, ICMTS 2003

Y2 - 17 March 2003 through 20 March 2003

ER -

Schmitz J, Cubaynes FN, Havens RJ, de Kort R, Scholten AJ, Tiemeijer LF. Test structure design considerations for RF-CV measurements on leaky dielectrics. In ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. Piscataway, NJ: IEEE. 2003. p. 181-185 doi: 10.1109/ICMTS.2003.1197458

Test structure design considerations for RF-CV measurements on leaky dielectrics

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