Test structure design considerations for RF-CV measurements on leaky dielectrics

J. Schmitz, F.N. Cubaynes, R.J. Havens, R. de Kort, A.J. Scholten, L.F. Tiemeijer

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.
Original languageEnglish
Title of host publicationICMTS 2003
Subtitle of host publicationProceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California
Place of PublicationPiscataway, NJ
PublisherIEEE Computer Society
Pages181-185
Number of pages5
ISBN (Print)0-7803-7653-6
DOIs
Publication statusPublished - 7 May 2003
Event16th International Conference on Microelectronic Test Structures, ICMTS 2003 - Monterey, United States
Duration: 17 Mar 200320 Mar 2003
Conference number: 16
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog03.html

Conference

Conference16th International Conference on Microelectronic Test Structures, ICMTS 2003
Abbreviated titleICMTS
CountryUnited States
CityMonterey
Period17/03/0320/03/03
Internet address

Fingerprint

Parameter extraction
Capacitance measurement
Voltage measurement
Leakage currents
Current density

Keywords

  • Integrated circuit design
  • Capacitance
  • CMOS integrated circuits
  • Dielectric thin films

Cite this

Schmitz, J., Cubaynes, F. N., Havens, R. J., de Kort, R., Scholten, A. J., & Tiemeijer, L. F. (2003). Test structure design considerations for RF-CV measurements on leaky dielectrics. In ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California (pp. 181-185). Piscataway, NJ: IEEE Computer Society. https://doi.org/10.1109/ICMTS.2003.1197458
Schmitz, J. ; Cubaynes, F.N. ; Havens, R.J. ; de Kort, R. ; Scholten, A.J. ; Tiemeijer, L.F. / Test structure design considerations for RF-CV measurements on leaky dielectrics. ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. Piscataway, NJ : IEEE Computer Society, 2003. pp. 181-185
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Schmitz, J, Cubaynes, FN, Havens, RJ, de Kort, R, Scholten, AJ & Tiemeijer, LF 2003, Test structure design considerations for RF-CV measurements on leaky dielectrics. in ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. IEEE Computer Society, Piscataway, NJ, pp. 181-185, 16th International Conference on Microelectronic Test Structures, ICMTS 2003, Monterey, United States, 17/03/03. https://doi.org/10.1109/ICMTS.2003.1197458

Test structure design considerations for RF-CV measurements on leaky dielectrics. / Schmitz, J.; Cubaynes, F.N.; Havens, R.J.; de Kort, R.; Scholten, A.J.; Tiemeijer, L.F.

ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. Piscataway, NJ : IEEE Computer Society, 2003. p. 181-185.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Schmitz J, Cubaynes FN, Havens RJ, de Kort R, Scholten AJ, Tiemeijer LF. Test structure design considerations for RF-CV measurements on leaky dielectrics. In ICMTS 2003: Proceedings of the 2003 International Conference on Microelectronic Test Structures : March 17-20, 2003, Double Tree Hotel, Monterey, California. Piscataway, NJ: IEEE Computer Society. 2003. p. 181-185 https://doi.org/10.1109/ICMTS.2003.1197458