Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate

Kyong-Taek Lee, Jurriaan Schmitz, George A. Brown, Dawei Heh, Rino Choi, Rusty Harris, Seung-Chul Song, Byoung Hun Lee, In-Sikh Han, Hi-Deok Lee, Yoon-Ha Jeong

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    Abstract

    Test structures for accurate UHF capacitance –voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.
    Original languageUndefined
    Title of host publicationProceedings of the 2007 IEEE International Conference on Microelectronic Test Structures
    Place of PublicationLos Alamitos
    PublisherIEEE Computer Society Press
    Pages124-127
    Number of pages4
    ISBN (Print)1-4244-0781-8
    DOIs
    Publication statusPublished - 19 Mar 2007
    Event20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 - Tokyo, Japan
    Duration: 19 Mar 200722 Mar 2007
    Conference number: 20

    Publication series

    Name
    PublisherIEEE Computer Society Press

    Conference

    Conference20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007
    Abbreviated titleICMTS
    CountryJapan
    CityTokyo
    Period19/03/0722/03/07

    Keywords

    • EWI-9725
    • IR-67079
    • METIS-245705

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