Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate

Kyong-Taek Lee; Jurriaan Schmitz; George A. Brown; Dawei Heh; Rino Choi; Rusty Harris; Seung-Chul Song; Byoung Hun Lee; In-Sikh Han; Hi-Deok Lee; Yoon-Ha Jeong

doi:10.1109/ICMTS.2007.374468

Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate

Kyong-Taek Lee
, Jurriaan Schmitz
, George A. Brown
, Dawei Heh
, Rino Choi
, Rusty Harris
, Seung-Chul Song
, Byoung Hun Lee
, In-Sikh Han
, Hi-Deok Lee
, Yoon-Ha Jeong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

256 Downloads (Pure)

Abstract

Test structures for accurate UHF capacitance –voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.

Original language	Undefined
Title of host publication	Proceedings of the 2007 IEEE International Conference on Microelectronic Test Structures
Place of Publication	Los Alamitos
Publisher	IEEE
Pages	124-127
Number of pages	4
ISBN (Print)	1-4244-0781-8
DOIs	https://doi.org/10.1109/ICMTS.2007.374468
Publication status	Published - 19 Mar 2007
Event	20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 - Tokyo, Japan Duration: 19 Mar 2007 → 22 Mar 2007 Conference number: 20

Publication series

Name
Publisher	IEEE Computer Society Press

Conference

Conference	20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007
Abbreviated title	ICMTS
Country/Territory	Japan
City	Tokyo
Period	19/03/07 → 22/03/07

Keywords

EWI-9725
IR-67079
METIS-245705

Access to Document

10.1109/ICMTS.2007.374468

Cite this

Lee, K.-T., Schmitz, J., Brown, G. A., Heh, D., Choi, R., Harris, R., Song, S.-C., Lee, B. H., Han, I.-S., Lee, H.-D., & Jeong, Y.-H. (2007). Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate. In Proceedings of the 2007 IEEE International Conference on Microelectronic Test Structures (pp. 124-127). Article 10.1109/ICMTS.2007.374468 IEEE. https://doi.org/10.1109/ICMTS.2007.374468

@inproceedings{7d72a59c140045c8b57f460f39d3bc05,

title = "Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate",

abstract = "Test structures for accurate UHF capacitance –voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.",

keywords = "EWI-9725, IR-67079, METIS-245705",

author = "Kyong-Taek Lee and Jurriaan Schmitz and Brown, \{George A.\} and Dawei Heh and Rino Choi and Rusty Harris and Seung-Chul Song and Lee, \{Byoung Hun\} and In-Sikh Han and Hi-Deok Lee and Yoon-Ha Jeong",

note = "10.1109/ICMTS.2007.374468 ; 20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007 ; Conference date: 19-03-2007 Through 22-03-2007",

year = "2007",

month = mar,

day = "19",

doi = "10.1109/ICMTS.2007.374468",

language = "Undefined",

isbn = "1-4244-0781-8",

publisher = "IEEE",

pages = "124--127",

booktitle = "Proceedings of the 2007 IEEE International Conference on Microelectronic Test Structures",

address = "United States",

}

Lee, K-T, Schmitz, J, Brown, GA, Heh, D, Choi, R, Harris, R, Song, S-C, Lee, BH, Han, I-S, Lee, H-D & Jeong, Y-H 2007, Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate. in Proceedings of the 2007 IEEE International Conference on Microelectronic Test Structures., 10.1109/ICMTS.2007.374468, IEEE, Los Alamitos, pp. 124-127, 20th IEEE International Conference on Microelectronic Test Structures, ICMTS 2007, Tokyo, Japan, 19/03/07. https://doi.org/10.1109/ICMTS.2007.374468

Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate. / Lee, Kyong-Taek; Schmitz, Jurriaan; Brown, George A. et al.
Proceedings of the 2007 IEEE International Conference on Microelectronic Test Structures. Los Alamitos: IEEE, 2007. p. 124-127 10.1109/ICMTS.2007.374468.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

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AU - Lee, Kyong-Taek

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AU - Brown, George A.

AU - Heh, Dawei

AU - Choi, Rino

AU - Harris, Rusty

AU - Song, Seung-Chul

AU - Lee, Byoung Hun

AU - Han, In-Sikh

AU - Lee, Hi-Deok

AU - Jeong, Yoon-Ha

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N2 - Test structures for accurate UHF capacitance –voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.

AB - Test structures for accurate UHF capacitance –voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.

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KW - METIS-245705

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