Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

L.K. Nanver, X. Liu, T. Knežević

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.
Original languageEnglish
Title of host publication2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages69-74
Number of pages6
ISBN (Electronic)978-1-5386-5071-4
ISBN (Print)978-1-5386-5069-1
DOIs
Publication statusPublished - 2018
Event31st IEEE International Conference on Microelectronic Test Structures 2018 - Courtyard Marriott Downtown, Austin, United States
Duration: 19 Mar 201822 Mar 2018
Conference number: 31

Publication series

NameIEEE International Conference on Microelectronic Test Structures (ICMTS)
PublisherIEEE
ISSN (Print)1071-9032
ISSN (Electronic)2158-1029

Conference

Conference31st IEEE International Conference on Microelectronic Test Structures 2018
Abbreviated titleICMTS 2018
CountryUnited States
CityAustin
Period19/03/1822/03/18

Fingerprint

Turnaround time
Diodes
Silicon
Electrons
Substrates
Metals

Keywords

  • Aluminum
  • Atomic Layer Deposition
  • Boron
  • Chemical vapor deposition
  • Electron injection
  • Interface charge

Cite this

Nanver, L. K., Liu, X., & Knežević, T. (2018). Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. In 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) (pp. 69-74). (IEEE International Conference on Microelectronic Test Structures (ICMTS)). Piscataway, NJ: IEEE. https://doi.org/10.1109/ICMTS.2018.8383767
Nanver, L.K. ; Liu, X. ; Knežević, T. / Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ : IEEE, 2018. pp. 69-74 (IEEE International Conference on Microelectronic Test Structures (ICMTS)).
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abstract = "A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.",
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Nanver, LK, Liu, X & Knežević, T 2018, Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. in 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS). IEEE International Conference on Microelectronic Test Structures (ICMTS), IEEE, Piscataway, NJ, pp. 69-74, 31st IEEE International Conference on Microelectronic Test Structures 2018, Austin, United States, 19/03/18. https://doi.org/10.1109/ICMTS.2018.8383767

Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. / Nanver, L.K.; Liu, X.; Knežević, T.

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ : IEEE, 2018. p. 69-74 (IEEE International Conference on Microelectronic Test Structures (ICMTS)).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.

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Nanver LK, Liu X, Knežević T. Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon. In 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS). Piscataway, NJ: IEEE. 2018. p. 69-74. (IEEE International Conference on Microelectronic Test Structures (ICMTS)). https://doi.org/10.1109/ICMTS.2018.8383767