Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

L.K. Nanver, X. Liu, T. Knežević

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    1 Downloads (Pure)

    Abstract

    A set of ring-shaped test structures is presented for electrical characterization of 2D as-deposited layers on Si that electrically interact with the substrate. The test method is illustrated by investigation of 3 different nm-thin layers that are expected to form an interfacial layer of negative fixed charge. A test procedure is described that gives a low turnaround time and non-destructive way of evaluating different deposition methods in terms of diode characteristics, interface conductance, and electron carrier injection into the deposited layer.
    Original languageEnglish
    Title of host publication2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages69-74
    Number of pages6
    ISBN (Electronic)978-1-5386-5071-4
    ISBN (Print)978-1-5386-5069-1
    DOIs
    Publication statusPublished - 2018
    Event31st IEEE International Conference on Microelectronic Test Structures 2018 - Courtyard Marriott Downtown, Austin, United States
    Duration: 19 Mar 201822 Mar 2018
    Conference number: 31

    Publication series

    NameIEEE International Conference on Microelectronic Test Structures (ICMTS)
    PublisherIEEE
    ISSN (Print)1071-9032
    ISSN (Electronic)2158-1029

    Conference

    Conference31st IEEE International Conference on Microelectronic Test Structures 2018
    Abbreviated titleICMTS 2018
    CountryUnited States
    CityAustin
    Period19/03/1822/03/18

    Keywords

    • Aluminum
    • Atomic Layer Deposition
    • Boron
    • Chemical vapor deposition
    • Electron injection
    • Interface charge

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