Tetanic stimulation of cortical networks induces parallel memory

Tamar van Veenendaal, Tim Witteveen, Jakob le Feber

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    Abstract

    The mechanisms behind memory have been studied mainly in artificial neural networks. Several mechanisms have been proposed, but it remains unclear yet if and how these findings can be translated to biological networks. Here we unravel part of the mechanism by showing that cultured neuronal networks develop an activity connectivity balance. External inputs disturb this balance and induce connectivity changes. The new connectivity is no longer disrupted by reapplication of the input, indicating that a network memorizes the input, analog to attractor memory networks as demonstrated in Hopfield network models. A different input again induces connectivity changes upon first application but not after repeated stimulation. Returning to the first input no longer affects connectivity, showing that memory traces are stored in parallel. A simple computer model robustly reproduces the experimental results and shows that spike timing dependent plasticity suffices to store memory traces of different inputs in parallel in neuronal networks.
    Original languageUndefined
    Title of host publication6th International IEEE/EMBS Conference on Neural Engineering, NER 2013
    EditorsM Akay
    Place of PublicationUSA
    PublisherIEEE
    Pages211-214
    Number of pages4
    ISBN (Print)978-1-4673-1969-0
    DOIs
    Publication statusPublished - Dec 2013
    Event6th International IEEE/EMBS Conference on Neural Engineering, NER 2013 - Sheraton San Diego Hotel, San Diego, United States
    Duration: 6 Nov 20138 Nov 2013
    Conference number: 6

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference6th International IEEE/EMBS Conference on Neural Engineering, NER 2013
    Abbreviated titleNER
    Country/TerritoryUnited States
    CitySan Diego
    Period6/11/138/11/13

    Keywords

    • EWI-24368
    • METIS-303998
    • IR-89150
    • BSS-Neurotechnology and cellular engineering

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