In this work we are looking at the prospect of using poly-silicon based Thin Film Transistors (TFTs) as photodetectors for optical interconnects that can detect light effectively at 1100nm wavelength from silicon based Light Emitting Diodes (LEDs). These TFTs were fabricated from laser crystallized silicon and were characterized under darkness and illumination. The photosensitivities of these devices were limited due to the presence of aluminium as their gate electrode but have shown us the possibility of a new approach to photodetection.
|Title of host publication||Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||3|
|Publication status||Published - 26 Nov 2009|
|Publisher||Technology Foundation STW|
- SC-ICF: Integrated Circuit Fabrication