TFTs as photodetectors for optical interconnects

B. Rangarajan, I. Brunets, J. Holleman, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    Abstract

    In this work we are looking at the prospect of using poly-silicon based Thin Film Transistors (TFTs) as photodetectors for optical interconnects that can detect light effectively at 1100nm wavelength from silicon based Light Emitting Diodes (LEDs). These TFTs were fabricated from laser crystallized silicon and were characterized under darkness and illumination. The photosensitivities of these devices were limited due to the presence of aluminium as their gate electrode but have shown us the possibility of a new approach to photodetection.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages52-54
    Number of pages3
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009

    Publication series

    Name
    PublisherTechnology Foundation STW

    Keywords

    • METIS-264280
    • SC-ICF: Integrated Circuit Fabrication
    • EWI-17078
    • IR-69089

    Cite this

    Rangarajan, B., Brunets, I., Holleman, J., Kovalgin, A. Y., & Schmitz, J. (2009). TFTs as photodetectors for optical interconnects. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 52-54). Utrecht, The Netherlands: STW.