The annealing of 1 MeV implantations of boron in silicon

S. Oosterhoff; J. Middelhoek

doi:10.1016/0038-1101(85)90103-0

The annealing of 1 MeV implantations of boron in silicon

S. Oosterhoff, J. Middelhoek

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Abstract

Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 10¹³ cm⁻². The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.

Original language	English
Pages (from-to)	427-433
Journal	Solid-state electronics
Volume	28
Issue number	5
DOIs	https://doi.org/10.1016/0038-1101(85)90103-0
Publication status	Published - 1985

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title = "The annealing of 1 MeV implantations of boron in silicon",

abstract = "Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 1013 cm−2. The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.",

author = "S. Oosterhoff and J. Middelhoek",

year = "1985",

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T1 - The annealing of 1 MeV implantations of boron in silicon

AU - Oosterhoff, S.

AU - Middelhoek, J.

PY - 1985

Y1 - 1985

N2 - Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 1013 cm−2. The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.

AB - Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 1013 cm−2. The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.

U2 - 10.1016/0038-1101(85)90103-0

DO - 10.1016/0038-1101(85)90103-0

M3 - Article

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VL - 28

SP - 427

EP - 433

JO - Solid-state electronics

JF - Solid-state electronics

IS - 5

ER -

The annealing of 1 MeV implantations of boron in silicon

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