The annealing of 1 MeV implantations of boron in silicon

S. Oosterhoff, J. Middelhoek

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    Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 1013 cm−2. The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.
    Original languageEnglish
    Pages (from-to)427-433
    JournalSolid-state electronics
    Issue number5
    Publication statusPublished - 1985


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