The application of silicon dioxide as an electret material

A.J. Sprenkels, Wouter Olthuis, Piet Bergveld

    Research output: Contribution to conferencePaper

    17 Citations (Scopus)
    62 Downloads (Pure)

    Abstract

    The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions
    Original languageUndefined
    Pages165-169
    DOIs
    Publication statusPublished - 1988
    Event6th International Symposium on Electrets, ISE 1988 - Oxford, United Kingdom
    Duration: 1 Sep 19883 Sep 1988
    Conference number: 6

    Conference

    Conference6th International Symposium on Electrets, ISE 1988
    Abbreviated titleISE
    CountryUnited Kingdom
    CityOxford
    Period1/09/883/09/88

    Keywords

    • IR-56112

    Cite this

    Sprenkels, A. J., Olthuis, W., & Bergveld, P. (1988). The application of silicon dioxide as an electret material. 165-169. Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom. https://doi.org/10.1109/ISE.1988.38543
    Sprenkels, A.J. ; Olthuis, Wouter ; Bergveld, Piet. / The application of silicon dioxide as an electret material. Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom.
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    author = "A.J. Sprenkels and Wouter Olthuis and Piet Bergveld",
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    Sprenkels, AJ, Olthuis, W & Bergveld, P 1988, 'The application of silicon dioxide as an electret material' Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom, 1/09/88 - 3/09/88, pp. 165-169. https://doi.org/10.1109/ISE.1988.38543

    The application of silicon dioxide as an electret material. / Sprenkels, A.J.; Olthuis, Wouter; Bergveld, Piet.

    1988. 165-169 Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom.

    Research output: Contribution to conferencePaper

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    T1 - The application of silicon dioxide as an electret material

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    AU - Olthuis, Wouter

    AU - Bergveld, Piet

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    N2 - The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions

    AB - The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions

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    Sprenkels AJ, Olthuis W, Bergveld P. The application of silicon dioxide as an electret material. 1988. Paper presented at 6th International Symposium on Electrets, ISE 1988, Oxford, United Kingdom. https://doi.org/10.1109/ISE.1988.38543