The application of silicon dioxide as an electret material

A.J. Sprenkels, Wouter Olthuis, Piet Bergveld

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    Abstract

    The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions
    Original languageUndefined
    Pages165-169
    DOIs
    Publication statusPublished - 1988
    Event6th International Symposium on Electrets, ISE 1988 - Oxford, United Kingdom
    Duration: 1 Sep 19883 Sep 1988
    Conference number: 6

    Conference

    Conference6th International Symposium on Electrets, ISE 1988
    Abbreviated titleISE
    CountryUnited Kingdom
    CityOxford
    Period1/09/883/09/88

    Keywords

    • IR-56112

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