The application of silicon dioxide as an electret material

A.J. Sprenkels; Wouter Olthuis; Piet Bergveld

doi:10.1109/ISE.1988.38543

The application of silicon dioxide as an electret material

A.J. Sprenkels
, Wouter Olthuis
, Piet Bergveld

Research output: Contribution to conference › Paper

19 Citations (Scopus)

350 Downloads (Pure)

Abstract

The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions

Original language	Undefined
Pages	165-169
DOIs	https://doi.org/10.1109/ISE.1988.38543
Publication status	Published - 1988
Event	6th International Symposium on Electrets, ISE 1988 - Oxford, United Kingdom Duration: 1 Sept 1988 → 3 Sept 1988 Conference number: 6

Conference

Conference	6th International Symposium on Electrets, ISE 1988
Abbreviated title	ISE
Country/Territory	United Kingdom
City	Oxford
Period	1/09/88 → 3/09/88

Keywords

IR-56112

Access to Document

10.1109/ISE.1988.38543

00038543

Cite this

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title = "The application of silicon dioxide as an electret material",

abstract = "The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions",

keywords = "IR-56112",

author = "A.J. Sprenkels and Wouter Olthuis and Piet Bergveld",

year = "1988",

doi = "10.1109/ISE.1988.38543",

language = "Undefined",

pages = "165--169",

note = "6th International Symposium on Electrets, ISE 1988 ; Conference date: 01-09-1988 Through 03-09-1988",

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TY - CONF

T1 - The application of silicon dioxide as an electret material

AU - Sprenkels, A.J.

AU - Olthuis, Wouter

AU - Bergveld, Piet

N1 - Conference code: 6

PY - 1988

Y1 - 1988

N2 - The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions

AB - The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions

KW - IR-56112

U2 - 10.1109/ISE.1988.38543

DO - 10.1109/ISE.1988.38543

M3 - Paper

SP - 165

EP - 169

T2 - 6th International Symposium on Electrets, ISE 1988

Y2 - 1 September 1988 through 3 September 1988

ER -