The avalanche-mode superjunction LED

Satadal Dutta, Peter G. Steeneken, Vishal Vishal Agarwal, Jurriaan Schmitz, Anne J. Annema, Raymond Josephus Engelbart Hueting

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
28 Downloads (Pure)

Abstract

Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse electric field. We present AMLEDs employing the superjunction (SJ) assisted reduced surface-field (RESURF) effect, which increases the uniformity of their electric field profile. Consequently, the EL area of these lateral devices is significantly enlarged as compared with conventional AMLEDs. Electrical and optical measurements demonstrate RESURF, as predicted by TCAD simulations, and show a direct link between EL-intensity (optical power per unit device area) and the field profile. Contrary to a conventional AMLED, the breakdown voltage of the avalanche-mode SJ-LED scales with the device length. Furthermore, the brightest SJ-LED, with a lateral intensity of ~30 mW cm-2 at an electrical power (PAMLED) of 0.1 W, shows a twofold higher internal quantum efficiency and a threefold higher EL-intensity compared with the conventional AMLED for the same PAMLED. This particular SJ-LED also shows an optimum radiative recombination efficiency at a current density of around ~800 A cm-2.
Original languageEnglish
Pages (from-to)1612-1618
Number of pages7
JournalIEEE transactions on electron devices
Volume64
Issue number4
DOIs
Publication statusPublished - Apr 2017

Fingerprint

Light emitting diodes
Silicon
Electric fields
Optical links
Photodiodes
Electric breakdown
Quantum efficiency
Light sources
Current density

Keywords

  • IR-104532
  • internal quantum ef﬿ciency (IQE)
  • Avalanche breakdown
  • reduced surface ﬿eld (RESURF)
  • reduced surface field (RESURF)
  • EWI-27893
  • photodiode (PD)
  • lightemitting diode (LED)
  • internal quantum efficiency (IQE)
  • electroluminescence (EL)
  • Silicon

Cite this

Dutta, Satadal ; Steeneken, Peter G. ; Agarwal, Vishal Vishal ; Schmitz, Jurriaan ; Annema, Anne J. ; Hueting, Raymond Josephus Engelbart. / The avalanche-mode superjunction LED. In: IEEE transactions on electron devices. 2017 ; Vol. 64, No. 4. pp. 1612-1618.
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The avalanche-mode superjunction LED. / Dutta, Satadal; Steeneken, Peter G.; Agarwal, Vishal Vishal; Schmitz, Jurriaan; Annema, Anne J.; Hueting, Raymond Josephus Engelbart.

In: IEEE transactions on electron devices, Vol. 64, No. 4, 04.2017, p. 1612-1618.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - The avalanche-mode superjunction LED

AU - Dutta, Satadal

AU - Steeneken, Peter G.

AU - Agarwal, Vishal Vishal

AU - Schmitz, Jurriaan

AU - Annema, Anne J.

AU - Hueting, Raymond Josephus Engelbart

PY - 2017/4

Y1 - 2017/4

N2 - Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse electric field. We present AMLEDs employing the superjunction (SJ) assisted reduced surface-field (RESURF) effect, which increases the uniformity of their electric field profile. Consequently, the EL area of these lateral devices is significantly enlarged as compared with conventional AMLEDs. Electrical and optical measurements demonstrate RESURF, as predicted by TCAD simulations, and show a direct link between EL-intensity (optical power per unit device area) and the field profile. Contrary to a conventional AMLED, the breakdown voltage of the avalanche-mode SJ-LED scales with the device length. Furthermore, the brightest SJ-LED, with a lateral intensity of ~30 mW cm-2 at an electrical power (PAMLED) of 0.1 W, shows a twofold higher internal quantum efficiency and a threefold higher EL-intensity compared with the conventional AMLED for the same PAMLED. This particular SJ-LED also shows an optimum radiative recombination efficiency at a current density of around ~800 A cm-2.

AB - Avalanche-mode light-emitting diodes (AMLEDs) in silicon (Si) are potential light sources to enable monolithic optical links in standard CMOS technology, due to the large overlap of their electroluminescent (EL) spectra with the responsivity of Si photodiodes. These EL spectra depend on the reverse electric field. We present AMLEDs employing the superjunction (SJ) assisted reduced surface-field (RESURF) effect, which increases the uniformity of their electric field profile. Consequently, the EL area of these lateral devices is significantly enlarged as compared with conventional AMLEDs. Electrical and optical measurements demonstrate RESURF, as predicted by TCAD simulations, and show a direct link between EL-intensity (optical power per unit device area) and the field profile. Contrary to a conventional AMLED, the breakdown voltage of the avalanche-mode SJ-LED scales with the device length. Furthermore, the brightest SJ-LED, with a lateral intensity of ~30 mW cm-2 at an electrical power (PAMLED) of 0.1 W, shows a twofold higher internal quantum efficiency and a threefold higher EL-intensity compared with the conventional AMLED for the same PAMLED. This particular SJ-LED also shows an optimum radiative recombination efficiency at a current density of around ~800 A cm-2.

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KW - reduced surface ﬿eld (RESURF)

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KW - lightemitting diode (LED)

KW - internal quantum efficiency (IQE)

KW - electroluminescence (EL)

KW - Silicon

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DO - 10.1109/TED.2017.2669645

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JO - IEEE transactions on electron devices

JF - IEEE transactions on electron devices

SN - 0018-9383

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