Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.
|Title of host publication||Proceedings of Micro and Nano Engineering|
|Place of Publication||Davos|
|Publication status||Published - 1 Sep 1994|
|Event||20th International Conference on Micro & Nano Engineering, MNE 1994 - Davos, Switzerland|
Duration: 25 Sep 1994 → 28 Sep 1994
Conference number: 20
|Other||20th International Conference on Micro & Nano Engineering, MNE 1994|
|Period||25/09/94 → 28/09/94|
Jansen, H. V., Burger, J. F., de Boer, M. J., Legtenberg, R., & Elwenspoek, M. C. (1994). The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches. In Proceedings of Micro and Nano Engineering (pp. 312-313). Davos.