The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henricus V. Jansen; Johannes Faas Burger; Meint J. de Boer; Rob Legtenberg; Michael Curt Elwenspoek

The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henricus V. Jansen, Johannes Faas Burger, Meint J. de Boer, Rob Legtenberg, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.

Original language	English
Title of host publication	Proceedings of Micro and Nano Engineering
Place of Publication	Davos
Pages	312-313
Publication status	Published - 1 Sept 1994
Event	20th International Conference on Micro & Nano Engineering, MNE 1994 - Davos, Switzerland Duration: 25 Sept 1994 → 28 Sept 1994 Conference number: 20

Other

Other	20th International Conference on Micro & Nano Engineering, MNE 1994
Abbreviated title	MNE
Country/Territory	Switzerland
City	Davos
Period	25/09/94 → 28/09/94

Keywords

METIS-114091
IR-17196

Cite this

@inproceedings{875009de7ec94a6c8e14a3dd4f45b5fb,

title = "The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches",

abstract = "Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.",

keywords = "METIS-114091, IR-17196",

author = "Jansen, {Henricus V.} and Burger, {Johannes Faas} and {de Boer}, {Meint J.} and Rob Legtenberg and Elwenspoek, {Michael Curt}",

year = "1994",

month = sep,

day = "1",

language = "English",

pages = "312--313",

booktitle = "Proceedings of Micro and Nano Engineering",

note = "20th International Conference on Micro & Nano Engineering, MNE 1994, MNE ; Conference date: 25-09-1994 Through 28-09-1994",

}

The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches. / Jansen, Henricus V.; Burger, Johannes Faas; de Boer, Meint J. et al.
Proceedings of Micro and Nano Engineering. Davos, 1994. p. 312-313.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

AU - Jansen, Henricus V.

AU - Burger, Johannes Faas

AU - de Boer, Meint J.

AU - Legtenberg, Rob

AU - Elwenspoek, Michael Curt

N1 - Conference code: 20

PY - 1994/9/1

Y1 - 1994/9/1

N2 - Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.

AB - Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.

KW - METIS-114091

KW - IR-17196

M3 - Conference contribution

SP - 312

EP - 313

BT - Proceedings of Micro and Nano Engineering

CY - Davos

T2 - 20th International Conference on Micro & Nano Engineering, MNE 1994

Y2 - 25 September 1994 through 28 September 1994

ER -

The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

Abstract

Other

Keywords

Fingerprint

Cite this