The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henricus V. Jansen, Johannes Faas Burger, Meint J. de Boer, Rob Legtenberg, Michael Curt Elwenspoek

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Abstract

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.
Original languageEnglish
Title of host publicationProceedings of Micro and Nano Engineering
Place of PublicationDavos
Pages312-313
Publication statusPublished - 1 Sep 1994
Event20th International Conference on Micro & Nano Engineering, MNE 1994 - Davos, Switzerland
Duration: 25 Sep 199428 Sep 1994
Conference number: 20

Other

Other20th International Conference on Micro & Nano Engineering, MNE 1994
Abbreviated titleMNE
CountrySwitzerland
CityDavos
Period25/09/9428/09/94

Keywords

  • METIS-114091
  • IR-17196

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    Jansen, H. V., Burger, J. F., de Boer, M. J., Legtenberg, R., & Elwenspoek, M. C. (1994). The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches. In Proceedings of Micro and Nano Engineering (pp. 312-313). Davos.