The black silicon method VI: high aspect ratio trench etching for MEMS applications

Henricus V. Jansen, Meint J. de Boer, Michael Curt Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    76 Citations (Scopus)
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    Abstract

    Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To handle these problems submicron HART's are etched and the black silicon method is used to direct the pressure, power, ion energy, or flows of a fluorine-based RIE into the preferred settings. The influence of ion energy and -trajectory is found to be most critical. The behaviour of the HART process is explained with the help of a set of variables and used to optimise the final profile. After this optimisation the RIE setting found is used for etching supermicron HART's which are characteristic for MEMS applications.
    Original languageEnglish
    Title of host publicationProceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96
    PublisherIEEE Computer Society
    Pages250-257
    Number of pages8
    ISBN (Print)0-7803-2985-6
    DOIs
    Publication statusPublished - 11 Feb 1996
    Event9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996 - San Diego, United States
    Duration: 11 Feb 199615 Feb 1996
    Conference number: 9

    Workshop

    Workshop9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996
    Abbreviated titleMEMS
    CountryUnited States
    CitySan Diego
    Period11/02/9615/02/96

    Keywords

    • METIS-112888
    • EWI-13570
    • IR-16006

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