The black silicon method VI: high aspect ratio trench etching for MEMS applications

Henricus V. Jansen; Meint J. de Boer; Michael Curt Elwenspoek

doi:10.1109/MEMSYS.1996.493989

The black silicon method VI: high aspect ratio trench etching for MEMS applications

Henricus V. Jansen
, Meint J. de Boer
, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

81 Citations (Scopus)

630 Downloads (Pure)

Abstract

Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To handle these problems submicron HART's are etched and the black silicon method is used to direct the pressure, power, ion energy, or flows of a fluorine-based RIE into the preferred settings. The influence of ion energy and -trajectory is found to be most critical. The behaviour of the HART process is explained with the help of a set of variables and used to optimise the final profile. After this optimisation the RIE setting found is used for etching supermicron HART's which are characteristic for MEMS applications.

Original language	English
Title of host publication	Proceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96
Publisher	IEEE
Pages	250-257
Number of pages	8
ISBN (Print)	0-7803-2985-6
DOIs	https://doi.org/10.1109/MEMSYS.1996.493989
Publication status	Published - 11 Feb 1996
Event	9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996 - San Diego, United States Duration: 11 Feb 1996 → 15 Feb 1996 Conference number: 9

Workshop

Workshop	9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996
Abbreviated title	MEMS
Country/Territory	United States
City	San Diego
Period	11/02/96 → 15/02/96

Keywords

METIS-112888
EWI-13570
IR-16006

Access to Document

10.1109/MEMSYS.1996.493989

black_siliconFinal published version, 1.62 MB

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title = "The black silicon method VI: high aspect ratio trench etching for MEMS applications",

abstract = "Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To handle these problems submicron HART's are etched and the black silicon method is used to direct the pressure, power, ion energy, or flows of a fluorine-based RIE into the preferred settings. The influence of ion energy and -trajectory is found to be most critical. The behaviour of the HART process is explained with the help of a set of variables and used to optimise the final profile. After this optimisation the RIE setting found is used for etching supermicron HART's which are characteristic for MEMS applications.",

keywords = "METIS-112888, EWI-13570, IR-16006",

author = "Jansen, \{Henricus V.\} and \{de Boer\}, \{Meint J.\} and Elwenspoek, \{Michael Curt\}",

year = "1996",

month = feb,

day = "11",

doi = "10.1109/MEMSYS.1996.493989",

language = "English",

isbn = "0-7803-2985-6",

pages = "250--257",

booktitle = "Proceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96",

publisher = "IEEE",

address = "United States",

note = "9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996, MEMS ; Conference date: 11-02-1996 Through 15-02-1996",

}

Jansen, HV, de Boer, MJ & Elwenspoek, MC 1996, The black silicon method VI: high aspect ratio trench etching for MEMS applications. in Proceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96. IEEE, pp. 250-257, 9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996, San Diego, California, United States, 11/02/96. https://doi.org/10.1109/MEMSYS.1996.493989

The black silicon method VI: high aspect ratio trench etching for MEMS applications. / Jansen, Henricus V.; de Boer, Meint J.; Elwenspoek, Michael Curt.
Proceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96. IEEE, 1996. p. 250-257.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The black silicon method VI: high aspect ratio trench etching for MEMS applications

AU - Jansen, Henricus V.

AU - de Boer, Meint J.

AU - Elwenspoek, Michael Curt

N1 - Conference code: 9

PY - 1996/2/11

Y1 - 1996/2/11

N2 - Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To handle these problems submicron HART's are etched and the black silicon method is used to direct the pressure, power, ion energy, or flows of a fluorine-based RIE into the preferred settings. The influence of ion energy and -trajectory is found to be most critical. The behaviour of the HART process is explained with the help of a set of variables and used to optimise the final profile. After this optimisation the RIE setting found is used for etching supermicron HART's which are characteristic for MEMS applications.

AB - Etching high aspect ratio trenches (HART's) in silicon is becoming increasingly important for MEMS applications. Currently, the most important technique is dry reactive ion etching (RIE). This paper presents solutions for the most notorious problems during etching HART's: tilting and the aspect ratio dependent etching effects such as bowing, RIE lag, bottling, and micrograss or black silicon. To handle these problems submicron HART's are etched and the black silicon method is used to direct the pressure, power, ion energy, or flows of a fluorine-based RIE into the preferred settings. The influence of ion energy and -trajectory is found to be most critical. The behaviour of the HART process is explained with the help of a set of variables and used to optimise the final profile. After this optimisation the RIE setting found is used for etching supermicron HART's which are characteristic for MEMS applications.

KW - METIS-112888

KW - EWI-13570

KW - IR-16006

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DO - 10.1109/MEMSYS.1996.493989

M3 - Conference contribution

SN - 0-7803-2985-6

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EP - 257

BT - Proceedings IEEE Ninth Annual International Workshop on Micro Electro Mechanical Systems 1996, MEMS '96

PB - IEEE

T2 - 9th Annual International Workshop on Micro Electro Mechanical Systems, MEMS 1996

Y2 - 11 February 1996 through 15 February 1996

ER -

The black silicon method VI: high aspect ratio trench etching for MEMS applications

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