The boost transistor: a field plate controlled LDMOST

A. Ferrara, Jurriaan Schmitz, B.K. Boksteen, Raymond Josephus Engelbart Hueting, P.G. Steeneken, A. Heringa, J. Claes, A.P. van der Wel

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.
    Original languageEnglish
    Title of host publication2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
    Place of PublicationUSA
    PublisherIEEE
    Pages165-168
    Number of pages4
    ISBN (Electronic)978-1-4799-6261-7
    ISBN (Print)978-1-4799-6259-4
    DOIs
    Publication statusPublished - 10 May 2015
    EventIEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015 - Hong Kong, China
    Duration: 10 May 201514 May 2015
    Conference number: 27

    Publication series

    Name
    PublisherIEEE Solid-State Circuits Society
    Volume27

    Conference

    ConferenceIEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015
    Abbreviated titleISPSD 2015
    CountryChina
    CityHong Kong
    Period10/05/1514/05/15

    Fingerprint

    Transistors
    Electrodes
    Electric breakdown
    Networks (circuits)
    Electric potential

    Keywords

    • LDMOS transistorTCAD simulationsaccumulation layerboost transistorbreakdown voltagedrain extensiondriving circuitfield plate controlled LDMOSTseparate field plate boost electrodesingle gate device
    • boost transistor
    • separate field plate boost electrode
    • single gate device
    • EWI-26871
    • accumulation layer
    • METIS-310829
    • driving circuit
    • drain extension
    • TCAD simulations
    • field plate controlled LDMOST
    • IR-99722
    • Breakdown voltage
    • LDMOS transistor

    Cite this

    Ferrara, A., Schmitz, J., Boksteen, B. K., Hueting, R. J. E., Steeneken, P. G., Heringa, A., ... van der Wel, A. P. (2015). The boost transistor: a field plate controlled LDMOST. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp. 165-168). USA: IEEE. https://doi.org/10.1109/ISPSD.2015.7123415
    Ferrara, A. ; Schmitz, Jurriaan ; Boksteen, B.K. ; Hueting, Raymond Josephus Engelbart ; Steeneken, P.G. ; Heringa, A. ; Claes, J. ; van der Wel, A.P. / The boost transistor: a field plate controlled LDMOST. 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). USA : IEEE, 2015. pp. 165-168
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    Ferrara, A, Schmitz, J, Boksteen, BK, Hueting, RJE, Steeneken, PG, Heringa, A, Claes, J & van der Wel, AP 2015, The boost transistor: a field plate controlled LDMOST. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, USA, pp. 165-168, IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015, Hong Kong, China, 10/05/15. https://doi.org/10.1109/ISPSD.2015.7123415

    The boost transistor: a field plate controlled LDMOST. / Ferrara, A.; Schmitz, Jurriaan; Boksteen, B.K.; Hueting, Raymond Josephus Engelbart; Steeneken, P.G.; Heringa, A.; Claes, J.; van der Wel, A.P.

    2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). USA : IEEE, 2015. p. 165-168.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AU - Steeneken, P.G.

    AU - Heringa, A.

    AU - Claes, J.

    AU - van der Wel, A.P.

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    N2 - In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

    AB - In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

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    Ferrara A, Schmitz J, Boksteen BK, Hueting RJE, Steeneken PG, Heringa A et al. The boost transistor: a field plate controlled LDMOST. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). USA: IEEE. 2015. p. 165-168 https://doi.org/10.1109/ISPSD.2015.7123415