The boost transistor: a field plate controlled LDMOST

A. Ferrara; Jurriaan Schmitz; B.K. Boksteen; Raymond Josephus Engelbart Hueting; P.G. Steeneken; A. Heringa; J. Claes; A.P. van der Wel

doi:10.1109/ISPSD.2015.7123415

The boost transistor: a field plate controlled LDMOST

A. Ferrara, Jurriaan Schmitz, B.K. Boksteen, Raymond Josephus Engelbart Hueting, P.G. Steeneken, A. Heringa, J. Claes, A.P. van der Wel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

14 Downloads (Pure)

Abstract

In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

Original language	English
Title of host publication	2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Place of Publication	USA
Publisher	IEEE
Pages	165-168
Number of pages	4
ISBN (Electronic)	978-1-4799-6261-7
ISBN (Print)	978-1-4799-6259-4
DOIs	https://doi.org/10.1109/ISPSD.2015.7123415
Publication status	Published - 10 May 2015
Event	IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015 - Hong Kong, China Duration: 10 May 2015 → 14 May 2015 Conference number: 27

Publication series

Name
Publisher	IEEE Solid-State Circuits Society
Volume	27

Conference

Conference	IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015
Abbreviated title	ISPSD 2015
Country/Territory	China
City	Hong Kong
Period	10/05/15 → 14/05/15

Keywords

LDMOS transistorTCAD simulationsaccumulation layerboost transistorbreakdown voltagedrain extensiondriving circuitfield plate controlled LDMOSTseparate field plate boost electrodesingle gate device
boost transistor
separate field plate boost electrode
single gate device
EWI-26871
accumulation layer
METIS-310829
driving circuit
drain extension
TCAD simulations
field plate controlled LDMOST
IR-99722
Breakdown voltage
LDMOS transistor

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10.1109/ISPSD.2015.7123415

Cite this

@inproceedings{2e101cc8d97b4c1c8f804d823dac94fa,

title = "The boost transistor: a field plate controlled LDMOST",

abstract = "In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.",

keywords = "LDMOS transistorTCAD simulationsaccumulation layerboost transistorbreakdown voltagedrain extensiondriving circuitfield plate controlled LDMOSTseparate field plate boost electrodesingle gate device, boost transistor, separate field plate boost electrode, single gate device, EWI-26871, accumulation layer, METIS-310829, driving circuit, drain extension, TCAD simulations, field plate controlled LDMOST, IR-99722, Breakdown voltage, LDMOS transistor",

author = "A. Ferrara and Jurriaan Schmitz and B.K. Boksteen and Hueting, {Raymond Josephus Engelbart} and P.G. Steeneken and A. Heringa and J. Claes and {van der Wel}, A.P.",

year = "2015",

month = may,

day = "10",

doi = "10.1109/ISPSD.2015.7123415",

language = "English",

isbn = "978-1-4799-6259-4",

publisher = "IEEE",

pages = "165--168",

booktitle = "2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)",

address = "United States",

note = "IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015, ISPSD 2015 ; Conference date: 10-05-2015 Through 14-05-2015",

}

Ferrara, A, Schmitz, J, Boksteen, BK, Hueting, RJE, Steeneken, PG, Heringa, A, Claes, J & van der Wel, AP 2015, The boost transistor: a field plate controlled LDMOST. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, USA, pp. 165-168, IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015, Hong Kong, China, 10/05/15. https://doi.org/10.1109/ISPSD.2015.7123415

TY - GEN

T1 - The boost transistor: a field plate controlled LDMOST

AU - Ferrara, A.

AU - Schmitz, Jurriaan

AU - Boksteen, B.K.

AU - Hueting, Raymond Josephus Engelbart

AU - Steeneken, P.G.

AU - Heringa, A.

AU - Claes, J.

AU - van der Wel, A.P.

N1 - Conference code: 27

PY - 2015/5/10

Y1 - 2015/5/10

N2 - In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

AB - In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance RonA reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed maintaining the breakdown voltage at 70V.

KW - LDMOS transistorTCAD simulationsaccumulation layerboost transistorbreakdown voltagedrain extensiondriving circuitfield plate controlled LDMOSTseparate field plate boost electrodesingle gate device

KW - boost transistor

KW - separate field plate boost electrode

KW - single gate device

KW - EWI-26871

KW - accumulation layer

KW - METIS-310829

KW - driving circuit

KW - drain extension

KW - TCAD simulations

KW - field plate controlled LDMOST

KW - IR-99722

KW - Breakdown voltage

KW - LDMOS transistor

U2 - 10.1109/ISPSD.2015.7123415

DO - 10.1109/ISPSD.2015.7123415

M3 - Conference contribution

SN - 978-1-4799-6259-4

SP - 165

EP - 168

BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

PB - IEEE

CY - USA

T2 - IEEE 27th International Symposium on Power Semiconductor Devices & IC's 2015

Y2 - 10 May 2015 through 14 May 2015

ER -

The boost transistor: a field plate controlled LDMOST

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