The charge plasma P-N diode

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    A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.
    Original languageUndefined
    Article number10.1109/LED.2008.2006864
    Pages (from-to)1367-1369
    Number of pages3
    JournalIEEE electron device letters
    Issue number412/12
    Publication statusPublished - 1 Dec 2008


    • SC-ICF: Integrated Circuit Fabrication
    • EWI-15028
    • IR-65374
    • METIS-255486

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