Abstract
A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.
Original language | Undefined |
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Article number | 10.1109/LED.2008.2006864 |
Pages (from-to) | 1367-1369 |
Number of pages | 3 |
Journal | IEEE electron device letters |
Volume | 29 |
Issue number | 412/12 |
DOIs | |
Publication status | Published - 1 Dec 2008 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- EWI-15028
- IR-65374
- METIS-255486