Abstract
A general kinetic concept is introduced which can be used to control growth modes in homoepitaxy. Its basic idea is that during growth of a layer, the characteristics length scale associated with nucleation is deliberately varied. The power of this concept lies in the fact that it can be realized experimentally in a variety of ways and is not restricted to special systems. It helps to understand various effects reported in the literature and may serve as a guideline for future methods of growth manipulation.
| Original language | Undefined |
|---|---|
| Pages (from-to) | 230-232 |
| Number of pages | 3 |
| Journal | Journal of crystal growth |
| Volume | 151 |
| Issue number | 151 |
| DOIs | |
| Publication status | Published - 1995 |
Keywords
- METIS-128933
- IR-24134
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